Wires A and B, having equal lengths of 42.7 m and equal diameters of 2.87 mm. are connected in series. A potential difference of 60.1V is applied between the ends of the composite wire. The resistances are R. 0.112 Q and Rg = 0.639 Q. For wire A, what are (a) magnitude Jof the current density and (b) potential difference V? (c) Of what type material is wire A made (see the table below)? For wire B. what are (d) J and (e) V? (f) Of what type material is B made? %3D Resistivities of Some Materials at Room Temperature (20°C) Temperature Coefficient of Resistivity, a (K ) Resistivity, p Material Typical Metals Silver 1.62 X 10-8 4.1 X 10-3 Copper 1.69 X 10 8 4.3 x 10- Gold 2.35 x 10 2.75 x 10-8 4.0 x 10-3 Aluminum 4.4 x 10-3 Manganin Tungsten 4.82 X 10 0.002 x 10-1 5.25 x 10-8 4.5 x 10-3 9.68 × 10 8 10.6x 10 Iron 6.5 x 10- Platinum 3.9 x 10- Silicon, pure Silicon, n-type" Silicon, p-type Typical Semiconductors 2.5 x 10 8.7 x 10 2.8x 10 -70 x 10-3 Typical Insulators 10 -1014 Glass Fused quartz ~10" "An alloy specifically designed to have a small value of a "Pure silicon doped with phosphorus impurities lo a charge carner density of 10 m "Pure silicon doped with aluminum impurities to a charge carrier density of 10 m (a) JA = Number Units A/m^2 (b) VA = Number Units (c) copper (d) Jg = Number i Units A/m^2 (e) VB = Number i Units V (f) iron
Wires A and B, having equal lengths of 42.7 m and equal diameters of 2.87 mm. are connected in series. A potential difference of 60.1V is applied between the ends of the composite wire. The resistances are R. 0.112 Q and Rg = 0.639 Q. For wire A, what are (a) magnitude Jof the current density and (b) potential difference V? (c) Of what type material is wire A made (see the table below)? For wire B. what are (d) J and (e) V? (f) Of what type material is B made? %3D Resistivities of Some Materials at Room Temperature (20°C) Temperature Coefficient of Resistivity, a (K ) Resistivity, p Material Typical Metals Silver 1.62 X 10-8 4.1 X 10-3 Copper 1.69 X 10 8 4.3 x 10- Gold 2.35 x 10 2.75 x 10-8 4.0 x 10-3 Aluminum 4.4 x 10-3 Manganin Tungsten 4.82 X 10 0.002 x 10-1 5.25 x 10-8 4.5 x 10-3 9.68 × 10 8 10.6x 10 Iron 6.5 x 10- Platinum 3.9 x 10- Silicon, pure Silicon, n-type" Silicon, p-type Typical Semiconductors 2.5 x 10 8.7 x 10 2.8x 10 -70 x 10-3 Typical Insulators 10 -1014 Glass Fused quartz ~10" "An alloy specifically designed to have a small value of a "Pure silicon doped with phosphorus impurities lo a charge carner density of 10 m "Pure silicon doped with aluminum impurities to a charge carrier density of 10 m (a) JA = Number Units A/m^2 (b) VA = Number Units (c) copper (d) Jg = Number i Units A/m^2 (e) VB = Number i Units V (f) iron
College Physics
11th Edition
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Raymond A. Serway, Chris Vuille
Chapter1: Units, Trigonometry. And Vectors
Section: Chapter Questions
Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...
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Transcribed Image Text:Wires A and B, having equal lengths of 42.7 m and equal diameters of 2.87 mm. are connected in series. A
potential difference of 60.1 V is applied between the ends of the composite wire. The resistances are R =
0.112 Q and Rg = 0.639 Q. For wire A, what are (a) magnitude Jof the current density and (b) potential
difference V? (c) Of what type material is wire A made (see the table below)? For wire B, what are (d) J and (e)
V? (f) Of what type material is B made?
%3D
Resistivities of Some Materials at Room Temperature (20°C)
Resistivity, p
(N m)
Temperature Coefficient
of Resistivity, a (K ')
Material
Typical Metals
Silver
1.62 x 10-8
4.1 x 10-3
Copper
1.69 X 10-8
4.3 x 10-3
Gold
2.35 x 10
2.75 x 10-8
4.0 x 10-
Aluminum
4.4 x 10-3
Manganin
Tungsten
4.82 X 10 8
5.25 x 10-8
0.002 x 10-
4.5 x 10-3
Iron
0.08 x 10 8
6.5 x 10-3
10.6 x 10
Typical Semiconductors
2.5 x 10
Platinum
3.9 x 10-
Silicon, pure
Silicon, n-type
Silicon, p-type
-70 x 10-
8.7 x 10
2.8x 10-
Typical Insulators
10 -104
Glass
Fused quartz
~10%
"An alloy specifically designed to have a small value of a
"Pure silicon doped with phosphorus impurities lo a charge carner density of 10 m
"Pure silicon doped with aluminum impurities to a charge carrier density of 10 m
(a) JA = Number
i
Units
A/m^2
(b) VA =
Units
V
(c)
copper
(d) Jg = Number i
Units
A/m^2
(e) Vg = Number
i
Units
V
(f)
iron
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