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What is the minimum value of V for which this MOS is saturated? Clearly identify types of transistors, drain and source terminals, calculate with and w/o body bias

What is the minimum value of V for which this MOS is saturated? Clearly identify types of transistors, drain and source terminals, calculate with and w/o body bias

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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The image contains a question related to MOS (Metal-Oxide-Semiconductor) transistors. **Question:** What is the minimum value of \( V_{AB} \) for which this MOS is saturated? **Circuit Diagram:** - There is a voltage source of \( 2V \) connected to the gate of the MOS transistor. - The MOS transistor is labeled as \( M_3 \). - The source terminal is connected to a point labeled \( B \) and the drain terminal is connected to a point labeled \( A \). Additional instructions are provided to: - Clearly identify the types of transistors, drain, and source terminals. - Calculate with and without body bias.
Transcribed Image Text:The image contains a question related to MOS (Metal-Oxide-Semiconductor) transistors. **Question:** What is the minimum value of \( V_{AB} \) for which this MOS is saturated? **Circuit Diagram:** - There is a voltage source of \( 2V \) connected to the gate of the MOS transistor. - The MOS transistor is labeled as \( M_3 \). - The source terminal is connected to a point labeled \( B \) and the drain terminal is connected to a point labeled \( A \). Additional instructions are provided to: - Clearly identify the types of transistors, drain, and source terminals. - Calculate with and without body bias.
### MOSFET Parameters Table This table outlines the parameters for NMOS and PMOS transistors, crucial for understanding MOSFET operation in various applications. | MOSFET Parameter | NMOS | PMOS | Units | |------------------|------|------|-----------| | K or K' | 24 | 8 | μA/V² | | Vₜ₀ | 0.75 | -0.75| V | | γ | 0.8 | 0.4 | V¹/² | | φ | 0.6 | 0.6 | V | | λ | 0.01 | 0.02 | V⁻¹ | #### Explanation: - **K or K' (Transconductance parameter):** Measures the amplification ability of the MOSFET. Higher values in NMOS (24 μA/V²) compared to PMOS (8 μA/V²) suggest stronger current-driving capacity. - **Vₜ₀ (Threshold Voltage):** The minimum gate-to-source voltage required to create a conducting path between the source and drain. Positive for NMOS (0.75 V), negative for PMOS (-0.75 V). - **γ (Body effect coefficient):** Reflects the change in threshold voltage due to a change in the substrate (body) bias. The NMOS has a higher γ (0.8 V¹/²) compared to PMOS (0.4 V¹/²). - **φ (Surface potential):** Indicates the required surface potential to invert the semiconductor surface. It is equal for both NMOS and PMOS at 0.6 V. - **λ (Channel length modulation parameter):** Describes the variation of the drain current with the drain-to-source voltage beyond saturation. Slightly higher in PMOS (0.02 V⁻¹) than NMOS (0.01 V⁻¹).
Transcribed Image Text:### MOSFET Parameters Table This table outlines the parameters for NMOS and PMOS transistors, crucial for understanding MOSFET operation in various applications. | MOSFET Parameter | NMOS | PMOS | Units | |------------------|------|------|-----------| | K or K' | 24 | 8 | μA/V² | | Vₜ₀ | 0.75 | -0.75| V | | γ | 0.8 | 0.4 | V¹/² | | φ | 0.6 | 0.6 | V | | λ | 0.01 | 0.02 | V⁻¹ | #### Explanation: - **K or K' (Transconductance parameter):** Measures the amplification ability of the MOSFET. Higher values in NMOS (24 μA/V²) compared to PMOS (8 μA/V²) suggest stronger current-driving capacity. - **Vₜ₀ (Threshold Voltage):** The minimum gate-to-source voltage required to create a conducting path between the source and drain. Positive for NMOS (0.75 V), negative for PMOS (-0.75 V). - **γ (Body effect coefficient):** Reflects the change in threshold voltage due to a change in the substrate (body) bias. The NMOS has a higher γ (0.8 V¹/²) compared to PMOS (0.4 V¹/²). - **φ (Surface potential):** Indicates the required surface potential to invert the semiconductor surface. It is equal for both NMOS and PMOS at 0.6 V. - **λ (Channel length modulation parameter):** Describes the variation of the drain current with the drain-to-source voltage beyond saturation. Slightly higher in PMOS (0.02 V⁻¹) than NMOS (0.01 V⁻¹).
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We need to find the minimum value of VAB for which the MOSFET is saturated, with and without body bias effect.

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