What happens with coupling capacitance in high frequency response using voltage divider configuration? Your answer What happens with coupling capacitance in low frequency response using bypassed emitter bias configuration? Your answer What is the value of the miller's output capacitance(FET) if Av is greater than 10? Your answer

What happens with coupling capacitance in high frequency response using voltage divider configuration? Your answer What happens with coupling capacitance in low frequency response using bypassed emitter bias configuration? Your answer What is the value of the miller's output capacitance(FET) if Av is greater than 10? Your answer

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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please explain For given BJT, β=200. The applied input frequency is 20 Mhz and net internal capacitance is 100 pF. What is the CE short circuit current gain at β cut-off frequency?
Figure 2 shows a typical BJT amplifier, with its parasitic capacitances displayed. The current gain of the transistor is B=150 and the voltage gain of the amplifier is Am =-125. The small signal resistances of the transistor are re =16 ohm and r0 = infinity, respectively. The values of resistors and capacitors in the figure are: R1 =80 kohm, R2 =20 Kohm, Rc = 2 Kohm, RE = 2 Kohm, Rs =50 W, RI=5 kohm, Cs=2 uF, Cc=2 uF, Ce =10 uF, Cbc =4 pF, Cbe = 10 pF, Cce =1 pF, Cwi = 4 pF, CWO = 9 pF, and Vcc = 20 V. a) Sketch a simplified circuit diagram of Figure 2 for high frequency analysis. b) Using the concept of "Miller effect capacitance", calculate the input and Output Miller effect capacitances of Figure 2, respectively. C) Determine the upper cut-off frequency of Figure 2 that is imposed by its input network only. d) Explain briefly the possible ways to increase the upper cut-off frequencv of this amplifier.
8(A) For the BJT transistor circuit shown below, determine whether the transistor is biased in: cutoff b. saturation linear region а. C. Vec t. Re 3902 RB 1.5V oc=75
Consider an n-channel MOSFET. Sketch a cross section through the source, gate and drain regions (a)if the source, drain and gate are all grounded, sketch the depletion regions on both sides of the metallurgical junctions.
What are the advantages and disadvantages of single-sideband transmission? Briefly describe each.
In the following problem we want to calculate an N-type MOSFET transistorparameters when body is connected to the source. The W/L = 10 for the device,and ignore channel length modulation. a)Based on triode and saturation equations that you learned in the class, plotdrain current versus drain voltage, when source is grounded and Vgs = 0.5,1, and 3V. Sweep the drain voltage from 0 V to 3 V. This plot is calledOutput characteristics of a transistor. Highlight the point where transistorsregion is switched from triode region into saturation.
1. Suppose the MOSFET drawn has Vth = 1 V, and ID = 1 mA when Vov = 0.5 V. Vin Vin VDD = 5V I R₂ = 5 kn Vout Vs.VD. VDD t t (a) Calculate the Vin values that lead to off, linear, and saturation modes respectively. Indicate the boundaries of these regions on the Vin plot. (b) Draw a suitable 100 mV amplitude sinusoid for Vin that keeps the MOSFET working in saturation mode. (c) Draw three time-domain waveforms for VS, VD, VDD that correspond to Vin from part (b).
Which option is correct 5. In a superheterodyne receiver, a varactor diode: a) is placed in series with the tank inductor to provide tracking at the low end of a large frequency band.b) is placed in parallel with each section of the ganged capacitors of the tank to provide tracking at the highend of a large frequency band.c) is placed in an RF amplifier to provide for proper neutralization.d) is placed in a tank circuit to provide for electronic tuning.
35. The ac schematic of an NMOS common-source stage is shown in the figure below, where part of the biasing circuits has been omitted for simplicity. For the n- channel MOSFET M, the Transconductance 9m = 1mA/V, and body effect and channel length modulation effect are to be neglected. The lower cutoff frequency in Hz of the circuit is approximately at RD 10 ΚΩ V₁o M C 1uF R 10 ΚΩ
Figure 1 illustrates a BJT amplifier with voltage gain of -115. a) Identify the capacitors in Figure 1, whose influences are negligible when considering the frequency response over high frequency range of > 1MHz. Explain briefly the reason. b) Identify the capacitor that needs treatment using the principle of "Miller effect capacitance". Calculate the input and output capacitances. c) Determine the upper-cut off frequency of the circuit, which is due to the output of the network only
Discuss in detail about the narrowband noise and analyze the properties of in- phase and quadrature components of narrow band noise.
Explain the high frequency response of CS MOSFET Amplifier with proper equation. Discuss the effect of parasitic capacitances.