1) please answer last subpart d) An n-channel MOSFET hasx=20 nm, µ₁=650 cm² IV.s, V₁=0.8V, -=10OX€ox 3.9×8.85×10-¹2 F/m; Cox=-C: 1₁.C (V-V)²OXtoxOXWLWLDetermine the drain current and operation mode for the following cases:a) VGS=5V, VDS=1Vb) VGs=2V, VDS=1.2VGSc) VGS=5V, V DS=-0.2 Vd) VGS=5V,V DS=5 V

Solution of part-d as mentioned in the Question : Given:tox=20 nm = 2×10-6 cmμn=650 cm2/V.sVt=0.8…

Answered: W An n-channel MOSFET has tox=20 nm,…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

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1) please answer last subpart d)

An n-channel MOSFET has
x=20 nm, µ₁=650 cm² IV.s, V₁=0.8V, -=10
OX
€ox 3.9×8.85×10-¹2 F/m; Cox=-
C: 1₁.C (V-V)²
OX
tox
OX
W
L
W
L
Determine the drain current and operation mode for the following cases:
a) VGS=5V, VDS=1V
b) VGs=2V, VDS=1.2V
GS
c) VGS=5V, V DS=-0.2 V
d) VGS=5V,V DS=5 V

Expert Solution

Step 1

Solution of part-d as mentioned in the Question :

$G i v e n : t_{o x} = 20 n m = 2 \times 10^{- 6} c m μ_{n} = 650 c m^{2} / V . s V_{t} = 0.8 V \frac{W}{L} = 10 ε_{o x} = 3.9 \times 8.85 \times 10^{- 12} F / m = 3.9 \times 8.85 \times 10^{- 14} F / c m C_{o x} = \frac{ε_{o x}}{t_{o x}} I_{D} = \frac{1}{2} μ_{n} C_{o x} \frac{W}{L} {(V_{G S} - V_{t})}^{2}$

$d) V_{G S} = 5 V a n d V_{D S} = 5 V : d e t e r m i n e c u r r e n t a n d o p e r a t i o n m o d e .$

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