Vss = 1.5 V, Vn = 0.6 V, Vp = -0.6 V, all channel 10 μΑ , find the For the circuit of Fig. 7.25, let VDD lengths = 1 um, k = 200 µA/V?, k, = 80 µA/V², and 1 = 0. For IREF widths of all transistors to obtain 1, = 60 µA, I, = 20 µA, and Is = 80 µA. It is further required that the voltage at the drain of Q, be allowed to go down to within 0.2 V of the negative supply and that the voltage at the drain of Qs be allowed to go up to within 0.2 V of the positive supply. %D Ans. W = 2.5 um; W, =15 µm; W3 = 5 µm; W4 = 12.5 µm; Ws = 50 µm

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EXERCISE
D 7.16 For the circuit of Fig. 7.25, let VDD
lengths = 1 µm, k,
widths of all transistors to obtain I, = 60 µA, ; = 20 µA, and Is
that the voltage at the drain of Q, be allowed to go down to within 0.2 V of the negative supply
and that the voltage at the drain of Qs be allowed to go up to within 0.2 V of the positive supply.
Vss = 1.5 V, V in = 0.6 V, V, = -0.6 V, all channel
0. For IREF = 10 µA, find the
= 80 µA. It is further required
%3D
tp
- 200 μΑ/ν, -80 μΑ/V, and λ
%3D
Ans. W = 2.5 µm; W, =15 µm; W3 = 5 µm; W4 = 12.5 µm; W; = 50 µm
%3D
Transcribed Image Text:EXERCISE D 7.16 For the circuit of Fig. 7.25, let VDD lengths = 1 µm, k, widths of all transistors to obtain I, = 60 µA, ; = 20 µA, and Is that the voltage at the drain of Q, be allowed to go down to within 0.2 V of the negative supply and that the voltage at the drain of Qs be allowed to go up to within 0.2 V of the positive supply. Vss = 1.5 V, V in = 0.6 V, V, = -0.6 V, all channel 0. For IREF = 10 µA, find the = 80 µA. It is further required %3D tp - 200 μΑ/ν, -80 μΑ/V, and λ %3D Ans. W = 2.5 µm; W, =15 µm; W3 = 5 µm; W4 = 12.5 µm; W; = 50 µm %3D
+
V DD
V SG5
Q4
Qs
15
I4
IREF
R
12
I3
Q3
+
V GSI
- V s
SS
Transcribed Image Text:+ V DD V SG5 Q4 Qs 15 I4 IREF R 12 I3 Q3 + V GSI - V s SS
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