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VDD ERD HM₁ CDB CGS = Zin or this common-source stage, the parasitic capacitances in M₁ are: CGS=0.8pF, CGD=0.2pF, CDB=0.01pF. et gm of M₁=1mA/V, RD=5kohm, ignore channel lenght modulation effect. The absolute vaule of Zin at 10Mrad/sec = Mrad/sec. CGD kohm; while the pole of the output terminal (at drain of M1)=

VDD ERD HM₁ CDB CGS = Zin or this common-source stage, the parasitic capacitances in M₁ are: CGS=0.8pF, CGD=0.2pF, CDB=0.01pF. et gm of M₁=1mA/V, RD=5kohm, ignore channel lenght modulation effect. The absolute vaule of Zin at 10Mrad/sec = Mrad/sec. CGD kohm; while the pole of the output terminal (at drain of M1)=

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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CGD CGS VDD ERD M₁ M : Сов Zin For this common-source stage, the parasitic capacitances in M₁ are: CGs=0.8pF, CGD=0.2pF, CDB=0.01pF. Let gm of M₁=1mA/V, RD=5kohm, ignore channel lenght modulation effect. The absolute vaule of Zin at 10Mrad/sec = Mrad/sec. HI HH" HH" kohm; while the pole of the output terminal (at drain of M1)=
Transcribed Image Text:CGD CGS VDD ERD M₁ M : Сов Zin For this common-source stage, the parasitic capacitances in M₁ are: CGs=0.8pF, CGD=0.2pF, CDB=0.01pF. Let gm of M₁=1mA/V, RD=5kohm, ignore channel lenght modulation effect. The absolute vaule of Zin at 10Mrad/sec = Mrad/sec. HI HH" HH" kohm; while the pole of the output terminal (at drain of M1)=
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