Using silicon dioxide as the diffusion mask: How much oxide is required as a barrier layer for this diffusion? Given the isolation diffusion in a bipolar process uses a 15hr-boron diffusion at 1100° c into a < 111> silicon wafer
Using silicon dioxide as the diffusion mask: How much oxide is required as a barrier layer for this diffusion? Given the isolation diffusion in a bipolar process uses a 15hr-boron diffusion at 1100° c into a < 111> silicon wafer
Chemistry
10th Edition
ISBN:9781305957404
Author:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste
Publisher:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste
Chapter1: Chemical Foundations
Section: Chapter Questions
Problem 1RQ: Define and explain the differences between the following terms. a. law and theory b. theory and...
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Using silicon dioxide as the diffusion mask:
How much oxide is required as a barrier layer for this diffusion? Given the isolation diffusion in a bipolar process uses a 15hr-boron diffusion at 1100° c into a < 111> silicon wafer

Transcribed Image Text:Mask thickness (um)
E, = 2.05
E - 2.05
Boron
Phosphorus
1100 °C
1.
Ɔ. 006
0.1
0.01
0.1
10
Diffusion time (hr)
Figure 3.10 Thickness of Silicon dioxide needed to mask
oron and phosphorus diffusions as a function of diffusior
time and temperature
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