Two silicon BJT are arranged as a Darlington pair. Both transistorshave VBE.ON=0.7 V, VCE.SAT=0.2 V, and VA > 00VBB5 V5 VRBRC1RC2o VOUTBJT Darlington PairCalculate for Ve1, Vour and Icz.Calculate for lcz if Vout is approximately 1.8 V GivenVBB = 5VB1 = 150B2 = 40Rg = 120kORcı = 5000Rc2 = 1000

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Two silicon BJT are arranged as a Darlington pair. Both transistors have VBE.ON=0.7 V, Vce.sat=0.2 V, and VA → 00 VBB 5 V 5 V RB RC1 Rc2 -o VOUT Q2 BJT Darlington Pair Calculate for Vce1, VOur and lcz. Calculate for Icz if Vout is approximately 1.8 V W

Two silicon BJT are arranged as a Darlington pair. Both transistors have VBE.ON=0.7 V, Vce.sat=0.2 V, and VA → 00 VBB 5 V 5 V RB RC1 Rc2 -o VOUT Q2 BJT Darlington Pair Calculate for Vce1, VOur and lcz. Calculate for Icz if Vout is approximately 1.8 V W

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Concept explainers

BJT (Bipolar Junction Transistor)

A BJT is a semiconductor device with 3 terminals that consist of a p-n junction diode that can amplify the signal or current. It is a current-controlled device. The three BJT terminals are base, collector, and emitter. The BJT works with the charge carrier, the two type of carriers in the BJT are holes and electrons, the charge carriers flow by the process of recombination. The signal to be amplifier is generally given as the input at the base terminal and an amplified form of it is available at the collector terminal.

Question

Two silicon BJT are arranged as a Darlington pair. Both transistors
have VBE.ON=0.7 V, VCE.SAT=0.2 V, and VA > 00
VBB
5 V
5 V
RB
RC1
RC2
o VOUT
BJT Darlington Pair
Calculate for Ve1, Vour and Icz.
Calculate for lcz if Vout is approximately 1.8 V

Given
VBB = 5V
B1 = 150
B2 = 40
Rg = 120kO
Rcı = 5000
Rc2 = 1000

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