ttempt to tunnel thrc n 0.8 nm and height meling probability thro potential is zero out

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In a particular semiconductor device,
electrons that are accelerated through a
potential of 5 V attempt to tunnel through
a barrier of width 0.8 nm and height 10 V.
What is the tunneling probability through
the barrier If the potential is zero outside
* ?the barrier
1.02 x 10-8
2.26 x 10-8
4.5 x 10-8
16.4 x 10-8
1.13 x 10-8
Transcribed Image Text:In a particular semiconductor device, electrons that are accelerated through a potential of 5 V attempt to tunnel through a barrier of width 0.8 nm and height 10 V. What is the tunneling probability through the barrier If the potential is zero outside * ?the barrier 1.02 x 10-8 2.26 x 10-8 4.5 x 10-8 16.4 x 10-8 1.13 x 10-8
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