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The transistor in the circuit shown in Figure 3.25(a) has parameters Vin = 0.25 V and K, = 30 µA/V². The circuit is biased at Vpd = 2.2 V. Let R1 + R2 = 500 k2. Redesign the circuit such that IDQ = 70 µA and VpsQ = 1.2 V.

The transistor in the circuit shown in Figure 3.25(a) has parameters Vin = 0.25 V and K, = 30 µA/V². The circuit is biased at Vpd = 2.2 V. Let R1 + R2 = 500 k2. Redesign the circuit such that IDQ = 70 µA and VpsQ = 1.2 V.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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The transistor in the circuit shown in Figure 3.25(a) has parameters 30 µ A/V². The circuit is biased at VDp = 2.2 V. Let Vtn = 0.25 V and K, = R1 + R2 = 500 kN. Redesign the circuit such that Ipo = 70 µ A and Vpsą = 1.2 V. VDD Ip Rp R1 Vps VG VGS R2 (a) (a) The dc equivalent circuit of the NMOS common-source
Transcribed Image Text:The transistor in the circuit shown in Figure 3.25(a) has parameters 30 µ A/V². The circuit is biased at VDp = 2.2 V. Let Vtn = 0.25 V and K, = R1 + R2 = 500 kN. Redesign the circuit such that Ipo = 70 µ A and Vpsą = 1.2 V. VDD Ip Rp R1 Vps VG VGS R2 (a) (a) The dc equivalent circuit of the NMOS common-source
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