The three loads in the circuit can be described as follows: Load 1 is a 2400 resistor in series with an inductive reactance of 700; load 2 is a capacitive reactance of 1200 in series with a 1600 resistor; and load 3 is a30º resistor in series with a capacitive reactance of 400. The frequency of the voltage source is 60 Hz. a) Give the power factor and reactive factor of each load. b) Give the power factor and reactive factor of the composite load seen by the voltage source. Vg Load 1 Load 2 Load 3
MOSFET (Metal Oxide Semiconductor Field Effect Transistor)
MOSFET stands for Metal Oxide Silicone Field Effect Transistor or Metal Oxide Semiconductor Field Effect Transistor. It is a type of IGFET, which means Insulated Gate Field Effect Transistor. A MOSFET has four-terminals namely gate (G), drain (D), source (S), and body (B). The body of the MOSFET is connected to the source terminal and it forms a three-terminal device. It is used in both the analog and digital circuits.
Power MOSFET
The power MOSFET transistor structures are enhancement types. The voltage rating is enhanced in the enhancement-mode MOSFETs by the use of a drift layer. The MOSFET generally contains four layers. The middle layer is the p-type layer also known as the body, whereas the n-type layer is called the drift layer or region. The drift region decides the breakdown voltage, and hence it is the lightly doped region in power MOSFETs. The first and last layers are the n+ layers. The first layer and the last layers are the source and drain layers. The structure of N-channel MOSFET (e-MOSFET) is n+ p n- n+, but the shape of p-channel is the opposite doping shape.
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