The silicon solar cell with 12cm x 12cm area is applicable 180µm. To form this p-n junction, 9x1018 phosphorus atomS and 5x1016 boron atoms are doped. The minority carrier (electron) life in the p- junction is tn = 140µs and its mobility ut = 0.07m²-'s-1, moreover, the life of minority carrier (hall) in the n-junction was measured as tp = 80µus and its mobility as µp= 0.023 m²V¯is¬1 a-) Find the p- and n- caliber minority carrier densities b-) Find the diffusion length of minority carriers and compare with the material. c-) Find open circuit voltage (VOC), short circuit current (ISC) and fill ratio (FF).

Introductory Circuit Analysis (13th Edition)
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Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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The silicon solar cell with 12cm x 12cm area is applicable 180µm. To form this p-n junction, 9x1018
phosphorus atoms and 5x1016 boron atoms are doped. The minority carrier (electron) life in the p-
junction is tn = 140µs and its mobility ut = 0.07m²V-'s-1, moreover, the life of minority carrier (hall)
in the n-junctioD. was measured as tp = 80µs and its mobility as up= 0.023 m²V-1s-1
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w mw
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a-) Find the p- and n- caliber minority carrier densities
b-) Find the diffusion length of minority carriers and compare with the material.
c-) Find open circuit voltage (VOC), short circuit current (ISC) and fill ratio (FF).
www w
Transcribed Image Text:The silicon solar cell with 12cm x 12cm area is applicable 180µm. To form this p-n junction, 9x1018 phosphorus atoms and 5x1016 boron atoms are doped. The minority carrier (electron) life in the p- junction is tn = 140µs and its mobility ut = 0.07m²V-'s-1, moreover, the life of minority carrier (hall) in the n-junctioD. was measured as tp = 80µs and its mobility as up= 0.023 m²V-1s-1 www w w mw www a-) Find the p- and n- caliber minority carrier densities b-) Find the diffusion length of minority carriers and compare with the material. c-) Find open circuit voltage (VOC), short circuit current (ISC) and fill ratio (FF). www w
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