The silicon solar cell with 12cm x 12cm area is applicable 180µm. To form this p-n junction, 9x1018 phosphorus atomS and 5x1016 boron atoms are doped. The minority carrier (electron) life in the p- junction is tn = 140µs and its mobility ut = 0.07m²-'s-1, moreover, the life of minority carrier (hall) in the n-junction was measured as tp = 80µus and its mobility as µp= 0.023 m²V¯is¬1 a-) Find the p- and n- caliber minority carrier densities b-) Find the diffusion length of minority carriers and compare with the material. c-) Find open circuit voltage (VOC), short circuit current (ISC) and fill ratio (FF).
The silicon solar cell with 12cm x 12cm area is applicable 180µm. To form this p-n junction, 9x1018 phosphorus atomS and 5x1016 boron atoms are doped. The minority carrier (electron) life in the p- junction is tn = 140µs and its mobility ut = 0.07m²-'s-1, moreover, the life of minority carrier (hall) in the n-junction was measured as tp = 80µus and its mobility as µp= 0.023 m²V¯is¬1 a-) Find the p- and n- caliber minority carrier densities b-) Find the diffusion length of minority carriers and compare with the material. c-) Find open circuit voltage (VOC), short circuit current (ISC) and fill ratio (FF).
Introductory Circuit Analysis (13th Edition)
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Publisher:Robert L. Boylestad
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![The silicon solar cell with 12cm x 12cm area is applicable 180µm. To form this p-n junction, 9x1018
phosphorus atoms and 5x1016 boron atoms are doped. The minority carrier (electron) life in the p-
junction is tn = 140µs and its mobility ut = 0.07m²V-'s-1, moreover, the life of minority carrier (hall)
in the n-junctioD. was measured as tp = 80µs and its mobility as up= 0.023 m²V-1s-1
www w
w mw
www
a-) Find the p- and n- caliber minority carrier densities
b-) Find the diffusion length of minority carriers and compare with the material.
c-) Find open circuit voltage (VOC), short circuit current (ISC) and fill ratio (FF).
www w](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Fc3c14068-d585-4675-81d5-5aef1f737ed4%2F12f83f54-39a5-4dc2-93ac-00e743bf3bec%2Fldwagmt_processed.png&w=3840&q=75)
Transcribed Image Text:The silicon solar cell with 12cm x 12cm area is applicable 180µm. To form this p-n junction, 9x1018
phosphorus atoms and 5x1016 boron atoms are doped. The minority carrier (electron) life in the p-
junction is tn = 140µs and its mobility ut = 0.07m²V-'s-1, moreover, the life of minority carrier (hall)
in the n-junctioD. was measured as tp = 80µs and its mobility as up= 0.023 m²V-1s-1
www w
w mw
www
a-) Find the p- and n- caliber minority carrier densities
b-) Find the diffusion length of minority carriers and compare with the material.
c-) Find open circuit voltage (VOC), short circuit current (ISC) and fill ratio (FF).
www w
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