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The properties of Si are given below. AW = 28.08 g/mol density = 2.33 g/cm3 e- mobility =0.14 m2/Vsec hole mobility= 0.05 m2/Vsec 20 ppm antimony (group V) is added to a batch of silicon during the crystal growth process. Answer the following.

The properties of Si are given below. AW = 28.08 g/mol density = 2.33 g/cm3 e- mobility =0.14 m2/Vsec hole mobility= 0.05 m2/Vsec 20 ppm antimony (group V) is added to a batch of silicon during the crystal growth process. Answer the following.

Chemistry
Chemistry
10th Edition
ISBN:9781305957404
Author:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste
Publisher:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste
Chapter1: Chemical Foundations
Section: Chapter Questions
Problem 1RQ: Define and explain the differences between the following terms. a. law and theory b. theory and...
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The properties of Si are given below. AW = 28.08 g/mol density = 2.33 g/cm3 e- mobility =0.14 m2/Vsec hole mobility= 0.05 m2/Vsec %3D 20 ppm antimony (group V) is added to a batch of silicon during the crystal growth process. Answer the following. (a) What is the resulting concentration (# per cm3) of Sb atoms in the silicon wafer? (b) What is the free electron concentration at room temperature? What assumption did you make? (c) What is the majority carrier? (d) What is the electrical conductivity of the doped Si?
Transcribed Image Text:The properties of Si are given below. AW = 28.08 g/mol density = 2.33 g/cm3 e- mobility =0.14 m2/Vsec hole mobility= 0.05 m2/Vsec %3D 20 ppm antimony (group V) is added to a batch of silicon during the crystal growth process. Answer the following. (a) What is the resulting concentration (# per cm3) of Sb atoms in the silicon wafer? (b) What is the free electron concentration at room temperature? What assumption did you make? (c) What is the majority carrier? (d) What is the electrical conductivity of the doped Si?
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