- The I region is intrinsic, in the P-Y-N structure shown. Determine the quantities in (a) and (c). Assume that no bias is applied. (Hint: It may be helpful to think of the I region as P type N₁ = 5 x 1016 cm -3 0.5 μη a P or N and then let the doping concentration approach zero. That is, Nd Na ≈0.) a- Find the built-in potential. b- Calculate the maximum electric field. N type N₁ = 3 × 1016 cm -3 c- Find the depletion-layer width (Wdep) and its widths on the N side (xn) and the P side.

Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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a,b,c please

- The I region is intrinsic, in the
P-Y-N structure shown. Determine
the quantities in (a) and (c). Assume
that no bias is applied. (Hint: It may
be helpful to think of the I region as
P type
N₁ = 5 x 1016 cm
-3
0.5 μη
a P or N and then let the doping concentration approach zero. That is, Nd Na ≈0.)
a- Find the built-in potential.
b- Calculate the maximum electric field.
N type
N₁ = 3 × 1016 cm
-3
c- Find the depletion-layer width (Wdep) and its widths on the N side (xn) and the P side.
Transcribed Image Text:- The I region is intrinsic, in the P-Y-N structure shown. Determine the quantities in (a) and (c). Assume that no bias is applied. (Hint: It may be helpful to think of the I region as P type N₁ = 5 x 1016 cm -3 0.5 μη a P or N and then let the doping concentration approach zero. That is, Nd Na ≈0.) a- Find the built-in potential. b- Calculate the maximum electric field. N type N₁ = 3 × 1016 cm -3 c- Find the depletion-layer width (Wdep) and its widths on the N side (xn) and the P side.
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