The following circuit shows a discrete common source M The MOSFTE is n-channel MOSFET. The transconductance of the n-channel MOSFET (g) is 3 mA/V. Rsig 100 k2, RGI = 47 MO, Raig 100 k, Ro210 M2, Rs =2 k2, Ro-47 kS2, RL 10 k2, Rig 100 k2, Cs-1 pF, Ced 0.2 pF, VA ne C-S MOSFET amplifier has three low break frequencies in low frequency band at fLI-1 Hz (caused by Cei), fi2 -100 Hz (caused by Cs), fio= 10HZ (caused by Ccz) (d) Draw small signal equivalent circuit of the amplifier in high frequency band. (e) Derive the transfer function, TH(s), and find the high corner frequency from the transfer function. (You may use Miller's theorem, but not tìme constants).
Power Amplifier
The power amplifier is an electronic amplifier designed to maximize the signal strength of a given input. The input signal strength is enhanced to a high enough level to drive output devices such as speakers, headphones, RF (Radio frequency) transmitters, etc. Unlike voltage / current amplifiers, the power amplifier is designed to drive core loads directly and is used as a storage block in the amplifier series.
Maximum Efficiency Criterion
In every field of engineering, there is a tremendous use of the machine and all those machines are equipped for their popular work efficiency so it very much important for operation engineers to monitor the efficiency of the machine, planning engineers to check out the efficiency of the machine before installing the machine and design engineers to design machine for higher efficiency than and then the utility will procure their products that will ultimately lead to profit and loss of the company. It indicates the importance of efficiency right from the initial stage as manufacturing units, intermediate stage as planning coordinators, and end-users stage as a utility.
![1. The following circuit shows a discrete common source MOSFET ampliier
The MOSFTE is n-channel MOSFET,
The transconductance of the n-channel MOSFET (g) is 3 mA/V.
Ri 100 kN, RGI = 47 MQ, Ri 100 kQ, Ra2
10 MO, Rs =2 k2, Ro – 4,7 k2,
RL 10 k2, Rig 100 k2, Cgs-1 pF, Cgd -0.2 pF, VA
The C-S MOSFET amplifier has three low break frequencies in low frequency band at
fLI 1 Hz (caused by Cei), fiz 100 Hz (caused by Cs), fio= 10HZ (caused by Cc)
(d) Draw small signal equivalent circuit of the amplifier in high frequency band.
(e) Derive the transfer function, TH(s), and find the high corner frequency from the
transfer function. (You may use Miller's theorem, but not time constants)
VDD
RG1
RD
Cc2
Q1
Cc1
RL
Rsig
RG2
Cs
Vsig
RS](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F2276cb77-2ddc-40e5-a0d8-11af9f5babe6%2F42c70b66-c113-4760-b03a-b523adb2bd18%2Fv0vlu3s_processed.jpeg&w=3840&q=75)
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