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The de current source Is = 10 µA of Fig. 1 has negligible leakage current and B = 50. If RB = 75 k2, RE = 200 2, and Rc = 4 k2, find the de current-gain ratio Ico/Is for VEE = 0 V. is connected from G to node B. The Si transistor (a) Vcc = 18 V and VEE = 4 V, and (b) Vcc= 22 V and +Vcc RC RB !s RE -VEE

The de current source Is = 10 µA of Fig. 1 has negligible leakage current and B = 50. If RB = 75 k2, RE = 200 2, and Rc = 4 k2, find the de current-gain ratio Ico/Is for VEE = 0 V. is connected from G to node B. The Si transistor (a) Vcc = 18 V and VEE = 4 V, and (b) Vcc= 22 V and +Vcc RC RB !s RE -VEE

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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The de current source Is = 10 µA of Fig. 1 has negligible leakage current and B = 50. If RB = 75 k2, RE = 200 2, and Rc = 4 k2, find the de current-gain ratio Ico/Is for VEE = 0 V. is connected from G to node B. The Si transistor (a) Vcc = 18 V and VEE = 4 V, and (b) Vcc= 22 V and +Vcc RC RB !s RE -VEE
Transcribed Image Text:The de current source Is = 10 µA of Fig. 1 has negligible leakage current and B = 50. If RB = 75 k2, RE = 200 2, and Rc = 4 k2, find the de current-gain ratio Ico/Is for VEE = 0 V. is connected from G to node B. The Si transistor (a) Vcc = 18 V and VEE = 4 V, and (b) Vcc= 22 V and +Vcc RC RB !s RE -VEE
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