The compound semiconductor family Indium-Phosphide-Arsenide InPxAS₁-x has the zinc blende crystal structure: FCC with In at 0,0,0 and P/As at 14,14,14. The lattice parameter a follows Vegard's Law (Rule of Mixtures), that is, a = aInP(x) + aInAs(1-x). An X-ray diffraction measurement (using Cu-Ka, λ = 1.54Å) is performed on an unknown sample of InPXAS1-X. If the first allowed X-ray reflection occurs at an angle of 12.81°, calculate the mass density of the unknown sample.
The compound semiconductor family Indium-Phosphide-Arsenide InPxAS₁-x has the zinc blende crystal structure: FCC with In at 0,0,0 and P/As at 14,14,14. The lattice parameter a follows Vegard's Law (Rule of Mixtures), that is, a = aInP(x) + aInAs(1-x). An X-ray diffraction measurement (using Cu-Ka, λ = 1.54Å) is performed on an unknown sample of InPXAS1-X. If the first allowed X-ray reflection occurs at an angle of 12.81°, calculate the mass density of the unknown sample.
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Transcribed Image Text:The compound semiconductor family Indium-Phosphide-Arsenide InPXAS₁-X has the zinc blende
crystal structure: FCC with In at 0,0,0 and P/As at 14,14,14. The lattice parameter a follows
Vegard's Law (Rule of Mixtures), that is, a = aInP(x) + aInAs(1-x). An X-ray diffraction
measurement (using Cu-Ka, λ = 1.54Å) is performed on an unknown sample of InPXAS1-X. If the
first allowed X-ray reflection occurs at an angle of 12.81°, calculate the mass density of the
unknown sample.
Problem data: aInP = 5.8687 Å; aInAs = 6.0583 Å; Atomic masses (in amu): In = 114.8; P = 30.97;
As = 74.92.
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