The band to band recombination coefficient B, for direct band gap semiconductors is higher then that for indirect band gap semiconductors. Select one: O True O False

Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
icon
Related questions
icon
Concept explainers
Question
The band to band recombination coefficient B, for direct band gap semiconductors is higher then that for
indirect band gap semiconductors.
Select one:
O True
O False
Transcribed Image Text:The band to band recombination coefficient B, for direct band gap semiconductors is higher then that for indirect band gap semiconductors. Select one: O True O False
: Properties of Si, Ge, and GaAs at 300 K , and Some Universal Constants
UNIVERSAL CONSTANTS
Properties
SEMICONDUCTOR
6.63 x 10-34 J.s
Si
Ge
Ga As
-31
9.11 x 10
Kg
Eg (eV)
n; (cm
Hn (cm²/V – s)
Hp (cm²/V – s)
Ne (cm-3)
Ny (cm-3)
m/m.
m;/m.
Er (F/m)
1.1
0.67
1.42
3.14
1.5 x 1010
2.3 x 1013
1.8 x 106
19
1.602 x 10
8.85 x 10
1.05 x 10-34 J – s
C
1500
3900
8500
12
€o
F/m
450
1900
400
1.04 x 1019
6 x 1018
4.45 x 1017
7.72 x 1018
2.78 x 1019
8.6 x 10-5 eV/K
26 mV (T
K
9.84 x 1018
KT/q
= 300 K)
0.082
0.98
0.067
26 meV (T
3 x 10 m/s
KT
300 K)
0.28
0.49
0.45
C
11.7
16
13.1
Nair = 1
NGaAs = 3.66
Some useful relations
EgAlGa1- As (r) = 1.424 + 1.247x (eV)
Egin. Ga1-As (x) = 1.425 – 1.501r + 0.436x2 (eV)
1 eV = 1.602 x 10-19 J
1 KG = 1 x 10-5 Wb/cm2
Transcribed Image Text:: Properties of Si, Ge, and GaAs at 300 K , and Some Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR 6.63 x 10-34 J.s Si Ge Ga As -31 9.11 x 10 Kg Eg (eV) n; (cm Hn (cm²/V – s) Hp (cm²/V – s) Ne (cm-3) Ny (cm-3) m/m. m;/m. Er (F/m) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 19 1.602 x 10 8.85 x 10 1.05 x 10-34 J – s C 1500 3900 8500 12 €o F/m 450 1900 400 1.04 x 1019 6 x 1018 4.45 x 1017 7.72 x 1018 2.78 x 1019 8.6 x 10-5 eV/K 26 mV (T K 9.84 x 1018 KT/q = 300 K) 0.082 0.98 0.067 26 meV (T 3 x 10 m/s KT 300 K) 0.28 0.49 0.45 C 11.7 16 13.1 Nair = 1 NGaAs = 3.66 Some useful relations EgAlGa1- As (r) = 1.424 + 1.247x (eV) Egin. Ga1-As (x) = 1.425 – 1.501r + 0.436x2 (eV) 1 eV = 1.602 x 10-19 J 1 KG = 1 x 10-5 Wb/cm2
Expert Solution
steps

Step by step

Solved in 2 steps with 1 images

Blurred answer
Knowledge Booster
Working and Construction of Diode
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.
Similar questions
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:
9780133923605
Author:
Robert L. Boylestad
Publisher:
PEARSON
Delmar's Standard Textbook Of Electricity
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:
9781337900348
Author:
Stephen L. Herman
Publisher:
Cengage Learning
Programmable Logic Controllers
Programmable Logic Controllers
Electrical Engineering
ISBN:
9780073373843
Author:
Frank D. Petruzella
Publisher:
McGraw-Hill Education
Fundamentals of Electric Circuits
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:
9780078028229
Author:
Charles K Alexander, Matthew Sadiku
Publisher:
McGraw-Hill Education
Electric Circuits. (11th Edition)
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:
9780134746968
Author:
James W. Nilsson, Susan Riedel
Publisher:
PEARSON
Engineering Electromagnetics
Engineering Electromagnetics
Electrical Engineering
ISBN:
9780078028151
Author:
Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:
Mcgraw-hill Education,