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SECTION 31–2 JFET BIASING TECHNIQUES 31-14 In Fig. 31–25, solve for l, and Vos for each of the DS following values of Ves: a. Ves = -1 V. b. Vcs = -1.5 V. = -2 V. c. Vcs d. Vcs = -2.5 V. Figure 31-25 +VDD = 12 V Rp = 1.2 k2 bss = 12 mA Veslofm = -4 V RG=1 M2 -VGG

SECTION 31–2 JFET BIASING TECHNIQUES 31-14 In Fig. 31–25, solve for l, and Vos for each of the DS following values of Ves: a. Ves = -1 V. b. Vcs = -1.5 V. = -2 V. c. Vcs d. Vcs = -2.5 V. Figure 31-25 +VDD = 12 V Rp = 1.2 k2 bss = 12 mA Veslofm = -4 V RG=1 M2 -VGG

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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**JFET Biasing Techniques** **Exercise: 31-14** In Figure 31–25, solve for \( I_D \) and \( V_{DS} \) for each of the following values of \( V_{GS} \): a. \( V_{GS} = -1 \, \text{V} \) b. \( V_{GS} = -1.5 \, \text{V} \) c. \( V_{GS} = -2 \, \text{V} \) d. \( V_{GS} = -2.5 \, \text{V} \) --- **Figure 31–25 Explanation:** The given circuit diagram is of a JFET biasing configuration. It includes: - A supply voltage, \( +V_{DD} \), of 12 V. - A drain resistor, \( R_D \), valued at 1.2 kΩ. - A gate resistor, \( R_G \), valued at 1 MΩ. - The JFET parameters included are: - \( I_{DSS} = 12 \, \text{mA} \) (the maximum drain current with the gate shorted to the source). - \( V_{GS(\text{off})} = -4 \, \text{V} \) (the pinch-off voltage). The task is to calculate the drain current \( I_D \) and the drain-source voltage \( V_{DS} \) for the specified gate-source voltages (\( V_{GS} \)).
Transcribed Image Text:**JFET Biasing Techniques** **Exercise: 31-14** In Figure 31–25, solve for \( I_D \) and \( V_{DS} \) for each of the following values of \( V_{GS} \): a. \( V_{GS} = -1 \, \text{V} \) b. \( V_{GS} = -1.5 \, \text{V} \) c. \( V_{GS} = -2 \, \text{V} \) d. \( V_{GS} = -2.5 \, \text{V} \) --- **Figure 31–25 Explanation:** The given circuit diagram is of a JFET biasing configuration. It includes: - A supply voltage, \( +V_{DD} \), of 12 V. - A drain resistor, \( R_D \), valued at 1.2 kΩ. - A gate resistor, \( R_G \), valued at 1 MΩ. - The JFET parameters included are: - \( I_{DSS} = 12 \, \text{mA} \) (the maximum drain current with the gate shorted to the source). - \( V_{GS(\text{off})} = -4 \, \text{V} \) (the pinch-off voltage). The task is to calculate the drain current \( I_D \) and the drain-source voltage \( V_{DS} \) for the specified gate-source voltages (\( V_{GS} \)).
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