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search The electron concentration in a region of silicon is shown in Fig. P2.44. (a) If the electron mobility is 350 cm²/Vs and the width WB = 0.25 µm, deter- mine the electron diffusion current density. Assume room temperature. (b) Plot the electron velocity for 0≤x≤ WB. n(x) (#/cm³) 1018 0 F 0 igure P2.44 WB M X 3 78% 54°F (8 3 4x

search The electron concentration in a region of silicon is shown in Fig. P2.44. (a) If the electron mobility is 350 cm²/Vs and the width WB = 0.25 µm, deter- mine the electron diffusion current density. Assume room temperature. (b) Plot the electron velocity for 0≤x≤ WB. n(x) (#/cm³) 1018 0 F 0 igure P2.44 WB M X 3 78% 54°F (8 3 4x

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Hello. I asked this question earlier but didn't get a good clear answer. I'm still a little confused. I can't find an equation for diffusion current density and I'm not sure how to work in the width into the equation. 

Thank you for your time and help. 

**Electron Concentration Analysis in Silicon** The electron concentration in a region of silicon is depicted in Fig. P2.44. The analysis involves: (a) Determining the electron diffusion current density given that the electron mobility is 350 cm²/V·s and the width \( W_B = 0.25 \, \mu\text{m} \). Room temperature is assumed for the calculations. (b) Plotting the electron velocity for the range \( 0 \leq x \leq W_B \). **Figure P2.44 Description:** - The vertical axis represents the electron concentration \( n(x) \) in units of #/cm³. - The horizontal axis represents the position along the silicon region, labeled as \( X \). - The graph is a linear plot illustrating a decrease in electron concentration from \( 10^{18} \, \text{cm}^{-3} \) at \( x = 0 \) to 0 at \( x = W_B \). - The slope of the line suggests a uniform gradient across the region. This analysis is crucial for understanding electron behavior in semiconductor materials.
Transcribed Image Text:**Electron Concentration Analysis in Silicon** The electron concentration in a region of silicon is depicted in Fig. P2.44. The analysis involves: (a) Determining the electron diffusion current density given that the electron mobility is 350 cm²/V·s and the width \( W_B = 0.25 \, \mu\text{m} \). Room temperature is assumed for the calculations. (b) Plotting the electron velocity for the range \( 0 \leq x \leq W_B \). **Figure P2.44 Description:** - The vertical axis represents the electron concentration \( n(x) \) in units of #/cm³. - The horizontal axis represents the position along the silicon region, labeled as \( X \). - The graph is a linear plot illustrating a decrease in electron concentration from \( 10^{18} \, \text{cm}^{-3} \) at \( x = 0 \) to 0 at \( x = W_B \). - The slope of the line suggests a uniform gradient across the region. This analysis is crucial for understanding electron behavior in semiconductor materials.
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