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r the E-MOSFET curcuit shown below, what is the value of the voltage gain (AyL)? Assume that for this particular vice Ip(on) = 200 mA at VGs(on) = 4 V. VGs(TH) = 2 V, gm = 23 ms. VDD +15 V Rp 3.3 k2 C2 R1 47 k2 10 uF R 33 kN 0.1 uF R 8.2 kf

r the E-MOSFET curcuit shown below, what is the value of the voltage gain (AyL)? Assume that for this particular vice Ip(on) = 200 mA at VGs(on) = 4 V. VGs(TH) = 2 V, gm = 23 ms. VDD +15 V Rp 3.3 k2 C2 R1 47 k2 10 uF R 33 kN 0.1 uF R 8.2 kf

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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For the E-MOSFET curcuit shown below, what is the value of the voltage gain (AyL)? Assume that for this particular device Ipron) = 200 mA at VGs(on) = 4 V. VeS(TH) = 2 V, gm = 23 mS. %3D VDD +15 V Rp 3.3 k2 C2 R1 47 k2 C 10 uF 0.1 uF R R 8.2 k2 33 kN
Transcribed Image Text:For the E-MOSFET curcuit shown below, what is the value of the voltage gain (AyL)? Assume that for this particular device Ipron) = 200 mA at VGs(on) = 4 V. VeS(TH) = 2 V, gm = 23 mS. %3D VDD +15 V Rp 3.3 k2 C2 R1 47 k2 C 10 uF 0.1 uF R R 8.2 k2 33 kN
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