Question * Consider a homogeneously doped n-type semiconductor at 300K. The electron concentration is equal to 10" cm', n- 10"cm', - 1000 cmV-sec, ,- 500 cm'N-sec. To-2 10's. Tpo1 10's and the applied electric field is zero. A light beam in x-direction was applied to the sample resulting excess e-h pair of 2x10 cm at x-0(edge of the sample). Assuming steady state, then hole diffusion current density at x-20jum is .A/em. (use kT-0.025eV at 300K) a)43 b)62 e) 93 d) 185 e) 280 a
Question * Consider a homogeneously doped n-type semiconductor at 300K. The electron concentration is equal to 10" cm', n- 10"cm', - 1000 cmV-sec, ,- 500 cm'N-sec. To-2 10's. Tpo1 10's and the applied electric field is zero. A light beam in x-direction was applied to the sample resulting excess e-h pair of 2x10 cm at x-0(edge of the sample). Assuming steady state, then hole diffusion current density at x-20jum is .A/em. (use kT-0.025eV at 300K) a)43 b)62 e) 93 d) 185 e) 280 a
Related questions
Question
R4
Transcribed Image Text:14
Question *
Consider a homogeneously doped n-type semiconductor at 300K. The electron
concentration is equal to 10 cm, n= 10"cm, = 1000 cmV-sec, ,= 500
cm'V-sec. To-2x10's. To-1x10's and the applied electric field is zero. A
light beam in x-direction was applied to the sample resulting excess e-h pair of
2x10" cm at x=0(edge of the sample). Assuming steady state, then hole
diffusion current density at x-20pum is .. HA/em. (use kT-0.025eV at 300K)
a)43
b)62
e) 93
d) 185
e) 280
a
C
d.
e
Expert Solution
This question has been solved!
Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.
Step by step
Solved in 2 steps with 2 images
