Question: 8 A pn junction is formed by doping the intrinsic Silicon with concentration of NA and No impurity. As a result, a voltage V, develops across the junction. Suppose the concentration of acceptor impurity has been increased by 100x. Determine the effect on the junction voltage.
Question: 8 A pn junction is formed by doping the intrinsic Silicon with concentration of NA and No impurity. As a result, a voltage V, develops across the junction. Suppose the concentration of acceptor impurity has been increased by 100x. Determine the effect on the junction voltage.
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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![Question: 8 A pn junction is formed by doping the intrinsic Silicon with concentration of NA and
No impurity. As a result, a voltage Vo develops across the junction. Suppose the concentration of
acceptor impurity has been increased by 100x. Determine the effect on the junction voltage.
Question: 9 pn junction with very high doping of acceptor impurity has junction width of 0.3 μm.
The concentration of donor impurity is around 10¹6. Find the built-in junction voltage and the
density of the stored charge on the either side of the pn junction.
(Assume relative permittivity of Silicon = = 11.6, NA>>Nd)](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Ff0412fd0-4bb1-46d3-b9e0-4499f1d5339e%2F80bb8a23-9dfc-4020-a9bf-f93da4570079%2Fazfxf1i_processed.jpeg&w=3840&q=75)
Transcribed Image Text:Question: 8 A pn junction is formed by doping the intrinsic Silicon with concentration of NA and
No impurity. As a result, a voltage Vo develops across the junction. Suppose the concentration of
acceptor impurity has been increased by 100x. Determine the effect on the junction voltage.
Question: 9 pn junction with very high doping of acceptor impurity has junction width of 0.3 μm.
The concentration of donor impurity is around 10¹6. Find the built-in junction voltage and the
density of the stored charge on the either side of the pn junction.
(Assume relative permittivity of Silicon = = 11.6, NA>>Nd)
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