Question: 8 A pn junction is formed by doping the intrinsic Silicon with concentration of NA and No impurity. As a result, a voltage V, develops across the junction. Suppose the concentration of acceptor impurity has been increased by 100x. Determine the effect on the junction voltage. Question: 9 pn junction with very high doping of acceptor impurity has junction width of 0.3 μm. The concentration of donor impurity is around 10¹6. Find the built-in junction voltage and the density of the stored charge on the either side of the pn junction. (Assume relative permittivity of Silicon=&= 11.6, NA>>Nd)

Question: 8 A pn junction is formed by doping the intrinsic Silicon with concentration of NA and No impurity. As a result, a voltage V, develops across the junction. Suppose the concentration of acceptor impurity has been increased by 100x. Determine the effect on the junction voltage. Question: 9 pn junction with very high doping of acceptor impurity has junction width of 0.3 μm. The concentration of donor impurity is around 10¹6. Find the built-in junction voltage and the density of the stored charge on the either side of the pn junction. (Assume relative permittivity of Silicon=&= 11.6, NA>>Nd)

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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