QUESTION 5: The parameters of the circuit shown below are: V* = 5 V, V = -5 V and R1 = 30 k2.The parameters of the transistors Q1 and Q2 are VBE1.2(on) = 0.7 V and ß = 118 .For transistor Q3, the VBE3(on) = 0.7 V and B3 = 90 .Assume V4= 0 for all three transistors. Find the value of each current shown in the figure.Format : 0.5839IREF (mA)Format : 0.2567Io=Ici =Ic2 (mA)I31 = IB2 (HA)Format : 2.4752Format : 4.5554Ig3 (µA)Format : 0.0369I33 (µA)Ic2 = loIREFR1Q3IB3 +VBE3E3IciQ1Q2IB1IB2V BE

We need to find current for given circuit.

QUESTION 5: The parameters of the circuit shown below are: V* = 5 V, V = -5 V and R1 = 30 k2. The parameters of the transistors Q1 and Q2 are VBE1.2(on) = 0.7 V and ß = 118 . For transistor Q3, the VBE3(on) = 0.7 V and ß3 = 90 . Assume V4 = ∞ for all three transistors. Find the value of each current shown in the figure. Format : 0.5839 IREF (mA) lo=Ici=Ic2 (mA) IB1 = IB2 (HA) E3 (HA) B3 (µA) Format : 0.2567 Format : 2.4752 Format : 4.5554 Format : 0.0369 V+ Ic2 = lo IREF R1 Q3 Ici IB3 + VBE3||E3 Q1 Q2 + IBI IB2 V BE

QUESTION 5: The parameters of the circuit shown below are: V* = 5 V, V = -5 V and R1 = 30 k2. The parameters of the transistors Q1 and Q2 are VBE1.2(on) = 0.7 V and ß = 118 . For transistor Q3, the VBE3(on) = 0.7 V and ß3 = 90 . Assume V4 = ∞ for all three transistors. Find the value of each current shown in the figure. Format : 0.5839 IREF (mA) lo=Ici=Ic2 (mA) IB1 = IB2 (HA) E3 (HA) B3 (µA) Format : 0.2567 Format : 2.4752 Format : 4.5554 Format : 0.0369 V+ Ic2 = lo IREF R1 Q3 Ici IB3 + VBE3||E3 Q1 Q2 + IBI IB2 V BE

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

1:What's the type logical circuit shown in figure, and find the minimum B of transistor to verify ork circuit if input voltage about (0- 10) V. +10V
Modify the circuit in the figure considering that the Thévenin source can give a maximun current of 20μA and through the transistor a maximum current of IC (max) = 5mA can circulate. Consider that the voltage of Thévenin Vth = 5V and that R2 = 100Kohms.
2. Describe the reason for the three n+ regions for bipolar junction transistor. n layer p* layer n layer (2) p-base layer (1) n' buried layer (3) p-substrate
A. For the circuit diagram shown below, determine and sketch the output voltage (Vout). 1_ohm GaAs 1 ohm 1_ohm Ge Si A 1_ohm. 6_Vpeak w. Vout)
QUESTION 3: Refer to the following figure. The circuit parameters are: V*= 4.5 V, V = -4.5 V and R1 = 9.3 k2. Assume that the transistor parameters are: ß = 60 , VBE(on) = 0.7 V, and V4=112 V. Determine the percent change in Io as VCE2 changes from 0.7 V to 5 V caused by change in Vị in the load circuit. IREF (mA) Format : 0.5644 Io (mA) Format : 0.5373 Ro (k2) Format : 322.7332 Percent change in Io (%)| Format : 9.9276 V+ |Load circuit RC IREF R1 Vo + V BEO + VCEI Q1 Q2 VCE2 + V BE
Bulb R1 R2 LDR Referring to the to the figure above, choose the correct operation principle Select one: a. Non of the scenarios is correct b. when the light increases→the LDR value increases → the voltage over transistor base increases>the transistor opens→ the bulb lights up c. when the light decreases→the LDR value decreases→ the voltage over transistor base decreases→the transistor opens→ the bulb lights up d. when the light decreases→the LDR value increases → the voltage over transistor base increases→the transistor opens→ the bulb lights up e. when the light increases →the LDR value increases → the voltage over transistor base decreases→the transistor opens→ the bulb lights up
QUESTION 2: Refer to the figure below. The circuit parameters are: V= 4.2 V, V = -4.2 V, and R1 = 51 kN. All transistors are matched. The transistor parameters are: B= 115 , VBE(on) = 0.7 V, and VA =. Determine IREF, Io, and IB1. IREF (mA) Io (mA) IB1 (HA) Format : 0.634 Format : 0.5679 Format : 6.7204 V+ Ic2 = lo IREF R1 IBI IB2 Q2 VCE2 VBEI V BE2 V- ww +
Calculate the resistance value, Rs needed for a p-channel JFET transistor circuit if you know that IDss = 25 mA, VGSS (off) = 15V, and VGs = 5V. %3D
In the following circuit VBB= 1.6 V, and IE1=2.7 mA. Assume 3 =46, and VBE = 0.7V Find the maximum possible value for R3 while keeping the transistor in the active area. Write your answer without units in k +5V VBB IE -5V R3 Type your answer...
(c) In the circuit below, Vcc is 5.0 volts and Re and Ra are 1.0 k2 and 15 k respectively. Determine the potential at the collector of the transistor T₂. Re Re T₁ R₁ R₁
Problem 1. A Darlington Transistor is composed of two NPN transistors. Given transistor Q1's gain B1 = 10, and transistor Q2's gain B2 = 20, the base current Ib1 = 7mA, calculate the following items. t Vs = 12V lct Q1 Ic2 Ib1 = 7 mA le1 Ib2 Q2 le2 Jel = 6) Th2 = (d) Ic2 = (e) Ie2 = (f) The total gain of Darlington Transistor =
Problem 2: The transistor in the circuit shown has VBEact = 0.7 V and ß = 100. Assume that VCEsat = 0 V and VBIAS = 1 V. a. b. What is the smallest value of vi that will not cause the transistor to go into cut-off. Hint: This should be a negative voltage. What is the largest value of v; that will not cause the transistor to go into saturation. Hint: This will be a positive voltage. Vi V BIAS +1 10K +10 V 1K Vo