QUESTION 4 What applied VCB (volts) will cause the maximum electric field magnitude across the CB depletion region to be the same as the maximum electric field in the EB depletion region when VEB=0V? The silicon emitter is doped p-type as 4*101/cc, the base is doped n-type 8.3*101 /cc, and the collector is doped p-type as 7.4*1014/cc, The transistor is at 300K. Three significant figures and fixed point notation. as

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QUESTION 4
What applied VCB (volts) will cause the maximum electric field magnitude across the CB
depletion region to be the same as the maximum electric field in the EB depletion region
when VEB=0V? The silicon emitter is doped p-type as 4*101/cc, the base is doped n-type
as 8.3*101/cc, and the collector is doped p-type as 7.4*1014/cc, The transistor is at 300K.
Three significant figures and fixed point notation.
QUESTION 5
What equal and opposite voltage can be applied to the EB and CB junctions (assume VEB=-
YCR > 3*VT) to make the slope of the minority carrier concentration exactly 4.4x10 0/cm^4?
18
Transcribed Image Text:QUESTION 4 What applied VCB (volts) will cause the maximum electric field magnitude across the CB depletion region to be the same as the maximum electric field in the EB depletion region when VEB=0V? The silicon emitter is doped p-type as 4*101/cc, the base is doped n-type as 8.3*101/cc, and the collector is doped p-type as 7.4*1014/cc, The transistor is at 300K. Three significant figures and fixed point notation. QUESTION 5 What equal and opposite voltage can be applied to the EB and CB junctions (assume VEB=- YCR > 3*VT) to make the slope of the minority carrier concentration exactly 4.4x10 0/cm^4? 18
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