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Question 4 of 4 < Current Attempt in Progress - /2 !!! ... In the production of many microelectronic devices, continuous chemical vapor deposition (CVD) processes are used to deposit thin and exceptionally uniform silicon dioxide films on silicon wafers. One CVD process involves the reaction between silane and oxygen at a very low pressure. SiH4 (g) + O2(g) → SiO2 (s) + 2 H2(g) The feed gas, which contains oxygen and silane in a ratio 10.00 mol O2/mol SiH4, enters the reactor at 298.15 K and 3.00 torr absolute. The reaction products emerge at 1475 K and 3.00 torr absolute. Essentially all of the silane in the feed is consumed. Basis Taking a basis of 1 m³ of feed gas, calculate the number of moles of each species in the feed and product mixtures and the extent of reaction, §. ni, IN (mol) ni, OUT (mol) SiH4 i i i SiO2 i i H2 i

Question 4 of 4 < Current Attempt in Progress - /2 !!! ... In the production of many microelectronic devices, continuous chemical vapor deposition (CVD) processes are used to deposit thin and exceptionally uniform silicon dioxide films on silicon wafers. One CVD process involves the reaction between silane and oxygen at a very low pressure. SiH4 (g) + O2(g) → SiO2 (s) + 2 H2(g) The feed gas, which contains oxygen and silane in a ratio 10.00 mol O2/mol SiH4, enters the reactor at 298.15 K and 3.00 torr absolute. The reaction products emerge at 1475 K and 3.00 torr absolute. Essentially all of the silane in the feed is consumed. Basis Taking a basis of 1 m³ of feed gas, calculate the number of moles of each species in the feed and product mixtures and the extent of reaction, §. ni, IN (mol) ni, OUT (mol) SiH4 i i i SiO2 i i H2 i

Introduction to Chemical Engineering Thermodynamics
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
Section: Chapter Questions
Problem 1.1P
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Question 4 of 4 < Current Attempt in Progress - /2 !!! ... In the production of many microelectronic devices, continuous chemical vapor deposition (CVD) processes are used to deposit thin and exceptionally uniform silicon dioxide films on silicon wafers. One CVD process involves the reaction between silane and oxygen at a very low pressure. SiH4 (g) + O2(g) → SiO2 (s) + 2 H2(g) The feed gas, which contains oxygen and silane in a ratio 10.00 mol O2/mol SiH4, enters the reactor at 298.15 K and 3.00 torr absolute. The reaction products emerge at 1475 K and 3.00 torr absolute. Essentially all of the silane in the feed is consumed. Basis Taking a basis of 1 m³ of feed gas, calculate the number of moles of each species in the feed and product mixtures and the extent of reaction, §. ni, IN (mol) ni, OUT (mol) SiH4 i i i SiO2 i i H2 i
Transcribed Image Text:Question 4 of 4 < Current Attempt in Progress - /2 !!! ... In the production of many microelectronic devices, continuous chemical vapor deposition (CVD) processes are used to deposit thin and exceptionally uniform silicon dioxide films on silicon wafers. One CVD process involves the reaction between silane and oxygen at a very low pressure. SiH4 (g) + O2(g) → SiO2 (s) + 2 H2(g) The feed gas, which contains oxygen and silane in a ratio 10.00 mol O2/mol SiH4, enters the reactor at 298.15 K and 3.00 torr absolute. The reaction products emerge at 1475 K and 3.00 torr absolute. Essentially all of the silane in the feed is consumed. Basis Taking a basis of 1 m³ of feed gas, calculate the number of moles of each species in the feed and product mixtures and the extent of reaction, §. ni, IN (mol) ni, OUT (mol) SiH4 i i i SiO2 i i H2 i
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