QUESTION 3 What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2 area and doped with acceptors at 7.5*10^15/cc, 1000 times more donor doping, and forward bias of 0.62 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant digits with fixed point notation.

Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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microns. Assume p and n mobilities are 500 & 1500 cm^2/(V*s) respectively.
4.75 107
QUESTION 3
What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2 area and doped with acceptors at 7.5*10^15/cc, 1000 times more
donor doping, and forward bias of 0.62 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer
should be to two significant digits with fixed point notation.
QUESTION 4
How many stored carriers are outside depletion region with an ideal abrupt junction silicon diode with (1 micron)^2 area and doped with acceptors and donors at
5.29*10^15/cc, and forward bias of 0.63 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer
should be to two significant digits with fixed point notation.
ick Save and Submit to save and submit. Click Save All Answers to save all answers.
Transcribed Image Text:microns. Assume p and n mobilities are 500 & 1500 cm^2/(V*s) respectively. 4.75 107 QUESTION 3 What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2 area and doped with acceptors at 7.5*10^15/cc, 1000 times more donor doping, and forward bias of 0.62 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant digits with fixed point notation. QUESTION 4 How many stored carriers are outside depletion region with an ideal abrupt junction silicon diode with (1 micron)^2 area and doped with acceptors and donors at 5.29*10^15/cc, and forward bias of 0.63 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant digits with fixed point notation. ick Save and Submit to save and submit. Click Save All Answers to save all answers.
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