QUESTION 2. Identify whether the following statements are TRUE or FALSE. No explanation is needed. 1. Larger numerical aperture (NA) improves depth of focus (DOF). True OR False 2. Double Processing (DP) improves resolution for projection lithography. True OR False 3. Gate oxide isolates different MOS transistors on the same substrate. True OR False

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Chapter1: Units, Trigonometry. And Vectors
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Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...
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QUESTION 2.
Identify whether the following statements are TRUE or FALSE. No
explanation is needed.
1.
Larger numerical aperture (NA) improves depth of focus (DOF).
True OR False
2.
Double Processing (DP) improves resolution for projection lithography.
True OR False
3.
Gate oxide isolates different MOS transistors on the same substrate.
True OR False
4.
Drain and Source of a MOS transistor is made from polysilicon.
True OR False
5.
In proximity printing/lithography resolution is not good because the gap
True OR False
between the mask and the resist causes strong light diffraction.
6.
Higher contrast leads to higher resolution in a photoresist.
True OR False
7.
Phase shifting masks (PSM) enhances resolution in lithography.
True OR False
8.
Resists which require lower dose for full exposure have higher sensitivity.
True OR False
9.
Damascus blades contained carbon nanotubes.
True OR False
10.
Standing wave formation in photoresist leads to better photoresist profiles.
True OR False
Transcribed Image Text:QUESTION 2. Identify whether the following statements are TRUE or FALSE. No explanation is needed. 1. Larger numerical aperture (NA) improves depth of focus (DOF). True OR False 2. Double Processing (DP) improves resolution for projection lithography. True OR False 3. Gate oxide isolates different MOS transistors on the same substrate. True OR False 4. Drain and Source of a MOS transistor is made from polysilicon. True OR False 5. In proximity printing/lithography resolution is not good because the gap True OR False between the mask and the resist causes strong light diffraction. 6. Higher contrast leads to higher resolution in a photoresist. True OR False 7. Phase shifting masks (PSM) enhances resolution in lithography. True OR False 8. Resists which require lower dose for full exposure have higher sensitivity. True OR False 9. Damascus blades contained carbon nanotubes. True OR False 10. Standing wave formation in photoresist leads to better photoresist profiles. True OR False
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