QUESTION -2 For the given BJT circuit, a) Find BDC, if the base current is 50 µA and voltage drop on Rc resistance is 5V. b) Given BDc = 200, Vcc = 10V, VBB=3V, evaluate IB, Ic, Ie, Vce, and Pd (Power Dissipation of transistor) values. c) Given BDc= 500, Vcc= 10V, VBB=6V, evaluate IB, Ic, Ie, VcE, and Pd (Power Dissipation of transistor) values. %3D %3D

Q: Consider the common-base circuit shown in the Figure. Assume the transistor alpha is a 0.85. Let VEE…

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Q: a) In the regulator circuit of Figure , Determine Rext if the maximum internal regulator current is…

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Q: Electronic 2 : For the network in the figure: a) Obtain the necessary equation for IB Base current…

A: Solution - (a) The given circuit is shown below,

Q: 4- If the base current in npn transistor = 2 mA, and (a) - 0.97, so, the collector current= @ 64.67…

A: Given data, In an npn transistor Base current, IB=2 mA αe=0.97

Q: Figure 2 shows a BJT amplifier circuit. Given, V3 = 2.4 V and assume that the emitter current equals…

A:

Q: The collector characteristics for a certain transistorare shown a. Find the ratio Ic/IB for VCE =10…

A: I hope this helped you and you learned a lot :) If you have any questions or clarification, do not…

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Q: 3. The collector current for a certain BJT is 9.8mA when emitter current is 10mA. What is a? 4. How…

A:

Q: Justify, three terminal devices are far more useful than two terminal ones. Describe in detail how…

A: The diode is a two terminal device. A diode has two electrodes and one PN junction The BJT and FET…

Q: BO + Q1 VCE VBE Q2 E

A: We will find out the DC current gain for given circuit

Q: a. In the circuit shown, measurements give Vg = + 4.3 V and Vc = + 2.3 V. Determine the mode of the…

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Q: Given shows the mutual characteristic for a junction gate field effect transistor. When the gate -…

A: According to the question, we are only given the gate to source voltage = -2.5 V

Q: Design the given circuit at Icq = ½ ICSAT and VCEQ = ½ Vcc use Vcc = 20 volts, IcsAT = 10 milli…

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Q: The primary difference between BJT and FET types of transistor is;

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Q: Vcc = 10V R, = 43k R3 = 3.9k R = 5.6k T1 T2 R2 = 140k R4 = 6.2k R = 5.6k VEE = -10V %3D

A: consider the given question;

Q: #6) For the BJT transistor circuit given below, determine: IB, lc, lE, VCE, and Vce Page | Re Vcc RB…

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Q: 1. Define a as used in bipolar junction transistor (BJT)

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Q: For the circuit in the figure below, determine the equations for IC3 and IC4 in terms of VCC, β, and…

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Q: The current gain in Common Base configuration (α) is  a. None b. Ratio of Collector Current to Base…

A: A common base transistor configuration is shown below,

Q: If the common base DC current gain of a BJT is 0.98, its common emitter DC current gain is

A: It is given that:The common base current gain (DC current gain) is,

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A: The characteristic constants of given n channel JFET are, IDSS=10 mAVP=-5V

Q: VDD VDD VDD IREF Ιουτ M3 M4 M1 M2 Figure 1

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Q: circuit diagram with a load ,for the Power MOSFET

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Q: If you have an pnp transistor and you have the following voltage readings across EB and CB…

A: Given VEB = 0.7 or VBE = -0.7  VCB  = 0.7 Find the Operation region of BJT ?

Q: 3. Does the experimental data indicate that Bac is constant at all points? Does this have any effect…

A: In the case of a BJT, the input current controls the output voltage. This is due to the fact that…

Q: 12 V R1 33 kn Rc 4.7 kn C2 10uF Vo ci 10uF 2N3904 R2 { 10 kn RE { 1.2kn Figure 1 2. Compute the…

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Q: 5. For a BJt Vt is 5 V, Re = 1200 ohm and bias current le is 15 mA. What is the voltage gain ?

A:

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Q: In a side-transistor circuit The maximum values are given below. Normal maximum VCC voltage of the…

A: Explanation: Given that, Ic(max) = 100 mA, Vce(max) = 20 volt Now,

Q: i) Explain the scenario in N channel JFET, when the voltage Vgs is increased from -1.5V to -2.5V and…

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Q: At cut-off, what statement below correctly describes the operation of a BJT transistor? Select one:…

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Q: 1. Design a fixed-base BJT bias circuit, similar to the one shown in Figure 1, such that VCE = 5.5…

A: The question is about designing of a self bias similar to the given circuit.

Q: (i). An NPN transistor with a 0.96, VCE(sat)-0.3 V and ICBO 3 µA. A common emitter configuration is…

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Q: If the DC current gain of a certain transistor operating in the linear region is 30 and the base…

A: Given, DC current gain of a transistor, β=30. The base current, IB=1 mA.

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Unijunction Transistor (UJT)

The Unijunction Transistor (UJT) is a three-terminal switching semiconductor device. It contains an n-shaped silicone object bar with a terminal attached to its two ends known as base one and base two. The third terminal is connected to a highly enclosed p-type material attached to the bar section of its length and is known as emitter. As there is only one corrective cross within the device, it is therefore called the 'Unijunction' transistor. The characteristics of the single junction transistor show the wrong resistance if it finds use in resting oscillator circuits for various applications.