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Question 10 Using the following data for a Si p-n junction diode maintained at T = 300 K. 1016 em 3 25 cm² /sec 10 cm² /sec NA = Np Dn Dp %3D Tp = Tn = 5 x 107 sec Dielectric constant Kş 11.7 Cross sectional area A I cm? The ideal reverse saturation current density is determined to be (a) 4.15x10-11 A/cm² (b) 4.56×10-11 A/cm? (c) 2.35×10-11 A/cm? (d) 3.5x1011 A/cm? The minority carrier diffusion equations can't be applied to obtain the minority carrier concen- trations and minority carrier currents in the depletion region of a p-n junction diode (a) True (b) False The physical origin of avalanche breakdown at large reverse bias voltages is due to (a) Impact ionization of host atoms by the energetic charge carriers at high electric fields (b) Heavy doping of p and n-side semiconductor regions (c) Tunneling of charge carriers at high electric fields (d) None of these

Question 10 Using the following data for a Si p-n junction diode maintained at T = 300 K. 1016 em 3 25 cm² /sec 10 cm² /sec NA = Np Dn Dp %3D Tp = Tn = 5 x 107 sec Dielectric constant Kş 11.7 Cross sectional area A I cm? The ideal reverse saturation current density is determined to be (a) 4.15x10-11 A/cm² (b) 4.56×10-11 A/cm? (c) 2.35×10-11 A/cm? (d) 3.5x1011 A/cm? The minority carrier diffusion equations can't be applied to obtain the minority carrier concen- trations and minority carrier currents in the depletion region of a p-n junction diode (a) True (b) False The physical origin of avalanche breakdown at large reverse bias voltages is due to (a) Impact ionization of host atoms by the energetic charge carriers at high electric fields (b) Heavy doping of p and n-side semiconductor regions (c) Tunneling of charge carriers at high electric fields (d) None of these

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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Question 10 Using the following data for a Si p-n junction diode maintained at T = 300 K. 1016 cm 25 cm?/sec 10 cm² /sec NA = ND Dn Pp Tp = Tn 5 x 10 sec Dielectric constant Ks 11.7 Cross - sectional area A I cm? The ideal reverse saturation current density is determined to be (a) 4.15x10-11 A/cm? (b) 4.56x10 11 A/cm² (c) 2.35x10-11 A/cm² (d) 3.5x10-11 A/cm? The minority carrier diffusion equations can't be applied to obtain the minority carrier conce trations and minority carrier currents in the depletion region of a p-n junction diode ncen- (a) True (b) False The physical origin of avalanche breakdown at large reverse bias voltages is due to (a) Impact ionization of host atoms by the energetic charge carriers at high electric fields (b) Heavy doping of p and n-side semiconductor regions (c) Tunneling of charge carriers at high electric fields (d) None of these
Transcribed Image Text:Question 10 Using the following data for a Si p-n junction diode maintained at T = 300 K. 1016 cm 25 cm?/sec 10 cm² /sec NA = ND Dn Pp Tp = Tn 5 x 10 sec Dielectric constant Ks 11.7 Cross - sectional area A I cm? The ideal reverse saturation current density is determined to be (a) 4.15x10-11 A/cm? (b) 4.56x10 11 A/cm² (c) 2.35x10-11 A/cm² (d) 3.5x10-11 A/cm? The minority carrier diffusion equations can't be applied to obtain the minority carrier conce trations and minority carrier currents in the depletion region of a p-n junction diode ncen- (a) True (b) False The physical origin of avalanche breakdown at large reverse bias voltages is due to (a) Impact ionization of host atoms by the energetic charge carriers at high electric fields (b) Heavy doping of p and n-side semiconductor regions (c) Tunneling of charge carriers at high electric fields (d) None of these
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