Please I would like if you can make a legal and correct solution Question 1-) A piece of crystalline silicon (Si) is doped uniformly with 2 x 1017 phosphorusatoms/cm'. For Si, B (material dependent parameter) = 7.3 x 1015 cm ³K 3/2bandgap) = 1.12 eV, k (Boltzmann constant) = 8.62 x 105 eV/K or k = 1.38 x 10-23 1/K,1eV = 1.6 × 10-19 .Eg (energya-) What type of material is this?b-) What are the hole and electron concentrations at room temperature (T = 300 K) ?c-) What are the hole and electron concentrations at 350 K?

It is given that: ND=2×1017 atoms/cm3B=7.3×1015 cm-3 K-32Eg=1.12 eVk=8.62×10-5 eV/K 1 eV=1.6×10-19 V

Question 1-) A piece of crystalline silicon (Si) is doped uniformly with 2 x 1017 phosphorus atoms/em. For Si, B (material dependent parameter) = 7.3 x 1015 cm ³K 3/2, E, (energy bandgap) = 1.12 eV, k (Boltzmann constant) = 8.62 × 10 1eV = 1.6 × 10-19 J. eV/K or k = 1.38 x 10-23 1/K, a-) What type of material is this? b-) What are the hole and electron concentrations at room temperature (T = 300 K) ? c-) What are the hole and electron concentrations at 350 K ?

Question 1-) A piece of crystalline silicon (Si) is doped uniformly with 2 x 1017 phosphorus atoms/em. For Si, B (material dependent parameter) = 7.3 x 1015 cm ³K 3/2, E, (energy bandgap) = 1.12 eV, k (Boltzmann constant) = 8.62 × 10 1eV = 1.6 × 10-19 J. eV/K or k = 1.38 x 10-23 1/K, a-) What type of material is this? b-) What are the hole and electron concentrations at room temperature (T = 300 K) ? c-) What are the hole and electron concentrations at 350 K ?

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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