Quantity Relationship (for Intrinsic Si at T-300 K) B- 73x 10"cm®Kª E,- 1.12 ev k- 8.62 x 10 eV/K ,- 1.5x 10"lcm Carier concentration in intrinsic silicon (em) , --4D, 1. - 9D Diffesion current - 1.60 x 10 coulomb D,- 12 cm D. - 34 cm's density (Aem')

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PLease explain each Vairable/value and tell me what they mean or represent, no need to tell the constants only non constants please.

Quantity
Relationship
(for Intrinsic Si at T- 300 K)
B = 7.3 x 10"cm K
E,= 1.12 ev
k = 8.62 x 10'eV/K
n, - 1.5 x 10"/cm
Carrier concentration in
intrinsic silicon (cm")
", - Br ur
Diffusion current
density (A/em')
1, - -qD,
9- 1.60 x 10" coulomb
D, = 12 cm'/s
D. - 34 cm/s
dn
"dx
J.
H, - 480 cm/Vs
H. - 1350 cm V
H, and 4, decrease with the increase
in doping concentration
Drift current density
(A/em')
Jan - 9(PH, + ny)E
Resistivity (A-em)
Relationship between
mobility and diffusivity
De - VT
D.
V,- kT/q - 25 mv
%3D
%3D
Transcribed Image Text:Quantity Relationship (for Intrinsic Si at T- 300 K) B = 7.3 x 10"cm K E,= 1.12 ev k = 8.62 x 10'eV/K n, - 1.5 x 10"/cm Carrier concentration in intrinsic silicon (cm") ", - Br ur Diffusion current density (A/em') 1, - -qD, 9- 1.60 x 10" coulomb D, = 12 cm'/s D. - 34 cm/s dn "dx J. H, - 480 cm/Vs H. - 1350 cm V H, and 4, decrease with the increase in doping concentration Drift current density (A/em') Jan - 9(PH, + ny)E Resistivity (A-em) Relationship between mobility and diffusivity De - VT D. V,- kT/q - 25 mv %3D %3D
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