QI Find VA When the diode s in fig.is Si Ge +12v loka VA ¥-8

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Discuss the operation of a diode in forward bias and reverse bias connections.

Household wiring is made with:  Group of answer choices semiconductors inside conductors. insulators inside conductors. semiconductors inside insulators inside conductors. conductors inside insulators.

In the complete diode model, O O the forward dynamic resistance is taken into account the reverse resistance is taken into account the barrier potential is taken into account O all of these O the choice is '1' &'3' O Other:

Plot out the Band Structures and the o-T curve of p-type semiconductor: 400K

A power diode used in a cell phone tower power supply dissipating power during the conductionprocess requires its junction temperature on not to exceed 180 degrees C. The power diode data sheet givesconduction-state voltage drop of 1.8V and for the DO-4 diode case, the junction-to-case thermal resistance, R-theta , jcis 0.8 degrees C/W. The diode is mounted over a heat sink having thermal resistances, case-to-sink R-theta,cs = 0.3degrees C/W and sink-to-ambient R-theta, sa= 0.6degrees C/W. Calculate the maximum current that diode can withstand safely without overheating if theambient temperature is 30 degrees C. Calculate the difference of temperature from case to sink. If the design requires to limit the junction temperature to 150 degrees C, select a value of R-theta,sa for aheat sink which should be used.

ON -3 e n DF n -M + CLJ F tane at Extrincic Semiconductor has Eg = 1 cv and holes a 2012 AT 01 X 8.) 14 3 18 300K = 10%/m² and electrons density at 300k = 10" /m³ determine fermi level at 300k and 500k K: boltzman's constant = 1.3 +10-22 jik