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QI Answer true or false 1-If the Electric field increase the Mobility of electrons is decrease in semi- conductor 2-In N-type the Fermi level rises to conduction band 3-When the Vp is 1V and Is equal 5µA at temperature 25° the I, equal 2.3333nA 4- In complete model the reverse resistance provide pass to I, 5-In characteristic curve of diode the I, decreases with increacesTemperture. QIB/ Complete the following statements. 1- In complete model the reverse resistance provide pass to 2-In characteristic curve of diode the Ip. . with increases Temperture. 3-Reverse current I, in diode cct is .... at 10° rise in temperature 4-When the forward bias is 0.2V and I, is 1µA at temperature 27º the Ip equal... 5-In Metal (Conductor) there is no.... 6-In N-type the minority carrier is determined by... Q2A: What is Fermi Deric probability of level above of Fermi level by 0.25 ev if temperature is 289° B: what is the difference between forward and reverse biasing of diode Q2B: In Bohr atom an electron in G.S absorbed Photon and transfer to forth orbital Find the energy of photon to transfer from one state to forth state and wavelength. Q3A: P-types silicon sample is 0.2cm long and has a rectangular cross section 0.03cm .The accepter concentration is 5x10" holes/cm'. The mobility is 100. A current of 10µA exists in the bar. Determine the electron and hole concentrations, the conductivity, current density,velocity of electrons, the voltage across the bar and reristance.n,-10". B: for the circuit series silicon diode.V,=0.4v Find the Iaindey Vaiodes Vond in lead foreword and reverse bias. Consider the diode is ideal

QI Answer true or false 1-If the Electric field increase the Mobility of electrons is decrease in semi- conductor 2-In N-type the Fermi level rises to conduction band 3-When the Vp is 1V and Is equal 5µA at temperature 25° the I, equal 2.3333nA 4- In complete model the reverse resistance provide pass to I, 5-In characteristic curve of diode the I, decreases with increacesTemperture. QIB/ Complete the following statements. 1- In complete model the reverse resistance provide pass to 2-In characteristic curve of diode the Ip. . with increases Temperture. 3-Reverse current I, in diode cct is .... at 10° rise in temperature 4-When the forward bias is 0.2V and I, is 1µA at temperature 27º the Ip equal... 5-In Metal (Conductor) there is no.... 6-In N-type the minority carrier is determined by... Q2A: What is Fermi Deric probability of level above of Fermi level by 0.25 ev if temperature is 289° B: what is the difference between forward and reverse biasing of diode Q2B: In Bohr atom an electron in G.S absorbed Photon and transfer to forth orbital Find the energy of photon to transfer from one state to forth state and wavelength. Q3A: P-types silicon sample is 0.2cm long and has a rectangular cross section 0.03cm .The accepter concentration is 5x10" holes/cm'. The mobility is 100. A current of 10µA exists in the bar. Determine the electron and hole concentrations, the conductivity, current density,velocity of electrons, the voltage across the bar and reristance.n,-10". B: for the circuit series silicon diode.V,=0.4v Find the Iaindey Vaiodes Vond in lead foreword and reverse bias. Consider the diode is ideal

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Q1 Answer true or false 1-If the Electric field increase the Mobility of electrons is decrease in semi- conductor 2-In N-type the Fermi level rises to conduction band 3-When the Vp is 1V and Is equal 5µA at temperature 25° the I, equal 2.3333nA 4- In complete model the reverse resistance provide pass to Ip 5-In characteristic curve of diode the I, decreases with increacesTemperture. QIB/ Complete the following statements. 1- In complete model the reverse resistance provide pass to 2-In characteristic curve of diode the Ip.... with increases Temperture. 3-Reverse current I, in diode cct is .. at 10° rise in temperature 4-When the forward bias is 0.2V and I, is 1µA at temperature 27º the Ip equal... 5-In Metal (Conductor) there is no.... 6-In N-type the minority carrier is determined by.... .......... Q2A: What is Fermi Deric probability of level above of Fermi level by 0.25 ev if temperature is 289° B: what is the difference between forward and reverse biasing of diode Q2B: In Bohr atom an electron in G.S absorbed Photon and transfer to forth orbital Find the energy of photon to transfer from one state to forth state and wavelength. Q3A: P-types silicon sample is 0.2cm long and has a rectangular cross section 0.03cm .The accepter concentration is 5x108 holes/cm'. The mobility is 100. A current of 10µA exists in the bar. Determine the electron and hole concentrations, the conductivity, current density,velocity of electrons, the voltage across the bar and reristance.n-10". B: for the circuit series silicon diode.Vp=0.4v Find the Idiodes V aiodes Vtoad in foreword and reverse bias. Consider the diode is ideal
Transcribed Image Text:Q1 Answer true or false 1-If the Electric field increase the Mobility of electrons is decrease in semi- conductor 2-In N-type the Fermi level rises to conduction band 3-When the Vp is 1V and Is equal 5µA at temperature 25° the I, equal 2.3333nA 4- In complete model the reverse resistance provide pass to Ip 5-In characteristic curve of diode the I, decreases with increacesTemperture. QIB/ Complete the following statements. 1- In complete model the reverse resistance provide pass to 2-In characteristic curve of diode the Ip.... with increases Temperture. 3-Reverse current I, in diode cct is .. at 10° rise in temperature 4-When the forward bias is 0.2V and I, is 1µA at temperature 27º the Ip equal... 5-In Metal (Conductor) there is no.... 6-In N-type the minority carrier is determined by.... .......... Q2A: What is Fermi Deric probability of level above of Fermi level by 0.25 ev if temperature is 289° B: what is the difference between forward and reverse biasing of diode Q2B: In Bohr atom an electron in G.S absorbed Photon and transfer to forth orbital Find the energy of photon to transfer from one state to forth state and wavelength. Q3A: P-types silicon sample is 0.2cm long and has a rectangular cross section 0.03cm .The accepter concentration is 5x108 holes/cm'. The mobility is 100. A current of 10µA exists in the bar. Determine the electron and hole concentrations, the conductivity, current density,velocity of electrons, the voltage across the bar and reristance.n-10". B: for the circuit series silicon diode.Vp=0.4v Find the Idiodes V aiodes Vtoad in foreword and reverse bias. Consider the diode is ideal
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