QI (a) Draw the voltage transfer characteristics - VTC - for an NMOS transistor MI having the drain (D) connected to a DC bias voltage VoD through a resistor Ro, the gate (G) connected to a voltage source vg and the source (S) connected to the ground, as shown in Figure 1. In which region of the VTC is it better to bias M1 to operate it as voltage amplifier? Justify your choice. (b) Draw the small signal equivalent circuit model valid in the mid-band frequency range for the circuit shown in Figure 1. State the validity of approximations. Design the circuit Figure I to operate as a common source amplifier with a voltage gain of | Gv |= 10 on the hypothesis that M1 is properly biased in the right region of operation and has a transconductance gm = 2.5 mS and output resistance r. = 80 kSn. In the small signal equivalent circuit of the amplifier the source is shorted to the ground and the gate is connected to ground through a resistor RG. State any assumptions and show the calculation. (c) Rp M1 Vas Vss-OV Figure 1

QI (a) Draw the voltage transfer characteristics - VTC - for an NMOS transistor MI having the drain (D) connected to a DC bias voltage VoD through a resistor Ro, the gate (G) connected to a voltage source vg and the source (S) connected to the ground, as shown in Figure 1. In which region of the VTC is it better to bias M1 to operate it as voltage amplifier? Justify your choice. (b) Draw the small signal equivalent circuit model valid in the mid-band frequency range for the circuit shown in Figure 1. State the validity of approximations. Design the circuit Figure I to operate as a common source amplifier with a voltage gain of | Gv |= 10 on the hypothesis that M1 is properly biased in the right region of operation and has a transconductance gm = 2.5 mS and output resistance r. = 80 kSn. In the small signal equivalent circuit of the amplifier the source is shorted to the ground and the gate is connected to ground through a resistor RG. State any assumptions and show the calculation. (c) Rp M1 Vas Vss-OV Figure 1

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

which ones are the answers??????
Question.
7
In a CE configuration, the voltage gain is __________ . a.always positive b.negative c.almost zero d.very low
TII 8.) 4 – 3 kW, 230 V and 3 – 8.5 kW, 230 V clothes dryers are to be placed in a building, the total VA loading to be used for these in the computation for service entrance conductor is: A. 24375 B. 37500 C. 33750 D. 36000
Answer the question quecly please
Answer question clearly and fully. Make sure I can properly read out the steps. Include any and all equations used during the solving process.
Topic Air Blast Circuit Breaker? Individual submission only accepted.  Minimum 350 words.  Reference should be added. .
1. The maximum electrical trade size of intermediate conduit is____________. a. 125 mm b. 100 mm c. 24 mm d. 12 mm
Please answer quickly. 17. The filament of incandescent lamp is usually made of: a. copper b. silver c. aluminum d. tungsten 18. A current measuring instrument can be modified to measure voltages by: a. using thicker wire in the coil b. using a high resistance shunt c. adding resistance in series d. adding resistance in parallel 21. "When two power sources are connected in a series-aiding configuration, the output voltage equals the _____________" a. supply with the highest voltage b. supply with the lowest voltage c. difference of the two supplies d. sum of the two supplies
In a Common Base (CB) configuration, the current gain is _____________. a.infinite b.almost no gain c.High d.very High