Q8: An ideal MOS capacitor with an n+ polysilicon gate has a silicon dioxide thickness of tox = 12 nm = 120 Å on a p-type silicon substrate doped at Na = 10¹6 cm-³. De- termine the capacitance Cox, CFB, Cmins and C'(inv) at (a) f = 1 Hz and (b) f = 1 MHz. (c) Determine VFB and VT. (d) Sketch C'/Cox versus VG for parts (a) and (b).
Q8: An ideal MOS capacitor with an n+ polysilicon gate has a silicon dioxide thickness of tox = 12 nm = 120 Å on a p-type silicon substrate doped at Na = 10¹6 cm-³. De- termine the capacitance Cox, CFB, Cmins and C'(inv) at (a) f = 1 Hz and (b) f = 1 MHz. (c) Determine VFB and VT. (d) Sketch C'/Cox versus VG for parts (a) and (b).
Introductory Circuit Analysis (13th Edition)
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Publisher:Robert L. Boylestad
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![Q8:
An ideal MOS capacitor with an n+ polysilicon gate has a silicon dioxide thickness
of tox = 12 nm = 120 Å on a p-type silicon substrate doped at N₁ = 10¹6 cm-³. De-
termine the capacitance Cox, CFB, Cmins and C'(inv) at (a) f = 1 Hz and (b) f = 1 MHz.
(c) Determine VFB and V₁. (d) Sketch C'/Cox versus VG for parts (a) and (b).](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Ff3144732-cd8e-4d15-8b5e-c18450259e48%2F69129fb2-7ca0-48e5-b337-dcfb4a238895%2Fa2g5xyl_processed.jpeg&w=3840&q=75)
Transcribed Image Text:Q8:
An ideal MOS capacitor with an n+ polysilicon gate has a silicon dioxide thickness
of tox = 12 nm = 120 Å on a p-type silicon substrate doped at N₁ = 10¹6 cm-³. De-
termine the capacitance Cox, CFB, Cmins and C'(inv) at (a) f = 1 Hz and (b) f = 1 MHz.
(c) Determine VFB and V₁. (d) Sketch C'/Cox versus VG for parts (a) and (b).
![Q8:
An ideal MOS capacitor with an n+ polysilicon gate has a silicon dioxide thickness
of tox = 12 nm = 120 Å on a p-type silicon substrate doped at N₁ = 10¹6 cm-³. De-
termine the capacitance Cox, CFB, Cmins and C'(inv) at (a) f = 1 Hz and (b) f = 1 MHz.
(c) Determine VFB and V₁. (d) Sketch C'/Cox versus VG for parts (a) and (b).](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Ff3144732-cd8e-4d15-8b5e-c18450259e48%2F69129fb2-7ca0-48e5-b337-dcfb4a238895%2Fdm35r0o_processed.jpeg&w=3840&q=75)
Transcribed Image Text:Q8:
An ideal MOS capacitor with an n+ polysilicon gate has a silicon dioxide thickness
of tox = 12 nm = 120 Å on a p-type silicon substrate doped at N₁ = 10¹6 cm-³. De-
termine the capacitance Cox, CFB, Cmins and C'(inv) at (a) f = 1 Hz and (b) f = 1 MHz.
(c) Determine VFB and V₁. (d) Sketch C'/Cox versus VG for parts (a) and (b).
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