Q4. a) With the aid of suitable labelled diagrams, describe the processes of carrier generation and recombination in a semiconductor. b) Explain what is mean by the "mobility" of carriers in a conducting material, why electron mobilities are higher for electrons than holes, and why electron mobilities are higher in semiconductors like silicon than in a highly conducing metal like copper. c) Explain how the electrical conductivity of a material depends on the free carrier density and carrier mobility, and hence describe and explain the differences in the temperature dependences of the conductivity of an intrinsic semiconductor (e.g. pure silicon) compared with a good metal (e.g. copper).

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Q4 Parts a,b and c please

Q4. a) With the aid of suitable labelled diagrams, describe the processes of carrier
generation and recombination in a semiconductor.
b)
Explain what is mean by the "mobility" of carriers in a conducting material,
why electron mobilities are higher for electrons than holes, and why electron
mobilities are higher in semiconductors like silicon than in a highly
conducing metal like copper.
c) Explain how the electrical conductivity of a material depends on the free
carrier density and carrier mobility, and hence describe and explain the
differences in the temperature dependences of the conductivity of an
intrinsic semiconductor (e.g. pure silicon) compared with a good metal (e.g.
copper).
d) A silicon wafer has a p-type feature on its surface, with an acceptor density
of NA = 7.5 × 10²1 per m³, a length of 200μm and cross-sectional dimensions
of 15μm x 0.9μm. A voltage of 1.5V is applied across its length.
(i)
Calculate the conductivity of the p-type silicon, hence the drift current
density and the total drift current along the length of the doped feature.
(ii) Calculate the sheet resistance of the p-type silicon and the resistance
of the doped feature.
(iii) If the same p-type silicon is used in a pn diode with a built-in voltage
of 0.70V, calculate the n-type doping density that is required.
Transcribed Image Text:Q4. a) With the aid of suitable labelled diagrams, describe the processes of carrier generation and recombination in a semiconductor. b) Explain what is mean by the "mobility" of carriers in a conducting material, why electron mobilities are higher for electrons than holes, and why electron mobilities are higher in semiconductors like silicon than in a highly conducing metal like copper. c) Explain how the electrical conductivity of a material depends on the free carrier density and carrier mobility, and hence describe and explain the differences in the temperature dependences of the conductivity of an intrinsic semiconductor (e.g. pure silicon) compared with a good metal (e.g. copper). d) A silicon wafer has a p-type feature on its surface, with an acceptor density of NA = 7.5 × 10²1 per m³, a length of 200μm and cross-sectional dimensions of 15μm x 0.9μm. A voltage of 1.5V is applied across its length. (i) Calculate the conductivity of the p-type silicon, hence the drift current density and the total drift current along the length of the doped feature. (ii) Calculate the sheet resistance of the p-type silicon and the resistance of the doped feature. (iii) If the same p-type silicon is used in a pn diode with a built-in voltage of 0.70V, calculate the n-type doping density that is required.
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