Q1. An audio-signal source can be represented by a 10-mV (rms) voltage source with 500-2 resistance. The audio signal is to be applied to a 10-2 loudspeaker as shown below. (a) If the signal source is connected directly to the loudspeaker, find the power delivered to the loudspeaker. (b) A voltage amplifier is to be connected between the signal source and the loudspeaker. The input voltage of the amplifier before saturation occurs is 8 mV rms. The maximum loudspeaker current is 100 mA rms. Design the amplifier so that maximum power is delivered to the loudspeaker (i.e. find A,R,, R). Find also this maximum power. (c) Find the rms value of the load voltage for part (b). R=500 N loudspeaker voltage amplifier: R=10 N R. voVi
MOSFET (Metal Oxide Semiconductor Field Effect Transistor)
MOSFET stands for Metal Oxide Silicone Field Effect Transistor or Metal Oxide Semiconductor Field Effect Transistor. It is a type of IGFET, which means Insulated Gate Field Effect Transistor. A MOSFET has four-terminals namely gate (G), drain (D), source (S), and body (B). The body of the MOSFET is connected to the source terminal and it forms a three-terminal device. It is used in both the analog and digital circuits.
Power MOSFET
The power MOSFET transistor structures are enhancement types. The voltage rating is enhanced in the enhancement-mode MOSFETs by the use of a drift layer. The MOSFET generally contains four layers. The middle layer is the p-type layer also known as the body, whereas the n-type layer is called the drift layer or region. The drift region decides the breakdown voltage, and hence it is the lightly doped region in power MOSFETs. The first and last layers are the n+ layers. The first layer and the last layers are the source and drain layers. The structure of N-channel MOSFET (e-MOSFET) is n+ p n- n+, but the shape of p-channel is the opposite doping shape.
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