Q1 Draw the voltage transfer characteristics VTC - for an NMOS transistor M1 having the drain (D) connected to a DC bias voltage VDD through a resistor RD, the gate (G) connected to a voltage source vgs and the source (S) connected to the ground, as shown in Figure 1. In which region of the VTC is it better to bias M1 to operate it as voltage amplifier? Justify your choice. (а) (b) Draw the small signal equivalent circuit model valid in the mid-band frequency range for the circuit shown in Figure 1. State the validity of approximations. Design the circuit Figure 1 to operate as a common source amplifier with a voltage gain of | Gv| = 10 on the hypothesis that M1 is properly biased in the right region of operation and has a transconductance gm = 2.5 mS and output resistance ro = 80 kN. In the small signal equivalent circuit of the amplifier the source is shorted to the ground and the gate is connected to ground through a resistor RG. State any assumptions and show the calculation. (c) VDD Rp VG = VIN D O VD=Vout M1 VGS Vss=0 V Figure 1

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Do c)?
Draw the voltage transfer characteristics VTC - for an NMOS transistor M1
having the drain (D) connected to a DC bias voltage VDD through a resistor RD,
the gate (G) connected to a voltage source vgs and the source (S) connected to
the ground, as shown in Figure 1. In which region of the VTC is it better to bias
M1 to operate it as voltage amplifier? Justify your choice.
Q1
(а)
(b)
Draw the small signal equivalent circuit model valid in the mid-band frequency
range for the circuit shown in Figure 1. State the validity of approximations.
Design the circuit Figure 1 to operate as a common source amplifier with a
voltage gain of | Gv| = 10 on the hypothesis that M1 is properly biased in the
right region of operation and has a transconductance gm = 2.5 mS and output
resistance ro = 80 kN. In the small signal equivalent circuit of the amplifier the
source is shorted to the ground and the gate is connected to ground through a
resistor RG. State any assumptions and show the calculation.
(c)
VDp
RD
Vp =Vout
VG= VIN
M1
VGS
Vss=0 V
Figure 1
Transcribed Image Text:Draw the voltage transfer characteristics VTC - for an NMOS transistor M1 having the drain (D) connected to a DC bias voltage VDD through a resistor RD, the gate (G) connected to a voltage source vgs and the source (S) connected to the ground, as shown in Figure 1. In which region of the VTC is it better to bias M1 to operate it as voltage amplifier? Justify your choice. Q1 (а) (b) Draw the small signal equivalent circuit model valid in the mid-band frequency range for the circuit shown in Figure 1. State the validity of approximations. Design the circuit Figure 1 to operate as a common source amplifier with a voltage gain of | Gv| = 10 on the hypothesis that M1 is properly biased in the right region of operation and has a transconductance gm = 2.5 mS and output resistance ro = 80 kN. In the small signal equivalent circuit of the amplifier the source is shorted to the ground and the gate is connected to ground through a resistor RG. State any assumptions and show the calculation. (c) VDp RD Vp =Vout VG= VIN M1 VGS Vss=0 V Figure 1
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