Q.4 – For the voltage-divider bias configuration of figure, the values of Vcc=22.10V, the resistances RB1=140 ohm, RB2=47.60ohm, Rc=1.680hm, Rp=0.831ohm and B=142/are given in Appendix.4 (VBE= 0.7 Volt). Determine in the circuit: VCC a) IBO b) Ico c) VCEQ RC d) ICMAX RB1 e) Vсво oVc + VB VCEQ B= . IBQ oVE RB2 RE

Q: 1. A certain phototransistor has a BDC. 150. If I = 250, what is the collector current? 2. In the…

A: Please note that these 2 are different questions.  As per our guidelines we are supposed to answer…

Q: 4) Consider the clamping circuit below, assume Vref=3 V and Vin=5sin(wt) ..Draw the output voltage…

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Q: 3 A peak rectifier (peak follower) Cir cuit is given below. Vs is a GOH3 Sinusuidal Vollage with…

A: Given data,  Vp=50 Vf=60 HzR=5 kΩVr=2 V

Q: ww 2:2 ww Vec www. ☺ W Re UNP Voll

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Q: 3. Design a four-resistor BJT bias circuit, similar to the one shown in Figure 2, such that V3 = 4 V…

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BJT (Bipolar Junction Transistor)

A BJT is a semiconductor device with 3 terminals that consist of a p-n junction diode that can amplify the signal or current. It is a current-controlled device. The three BJT terminals are base, collector, and emitter. The BJT works with the charge carrier, the two type of carriers in the BJT are holes and electrons, the charge carriers flow by the process of recombination. The signal to be amplifier is generally given as the input at the base terminal and an amplified form of it is available at the collector terminal.