Q.1. Write True or False, then correct the following sentences 1. In the cutoff region the collector-base and base-emitter junctions of a transistor are both forward-biased. 2. The value of a of a transistor is (1/1+(1/ẞ)). 3. BJT transistor amplifiers are referred to as voltage- controlled devices. 4. Amplifying action in BJT results in the label transistor; transfer + capacitor → transistor 5. The lower the stability factor, the more sensitive the network to variations in that parameter. 6. The input impedance of a BJT transistor amplifier is purely inductive in nature. 7. For BJT emitter-follower configuration, A, is low (1), while a 180° phase shift between V. and Vi.

Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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Q.1. Write True or False, then correct the following sentences
1. In the cutoff region the collector-base and base-emitter junctions of a transistor are
both forward-biased.
2. The value of a of a transistor is (1/1+(1/ẞ)).
3. BJT transistor amplifiers are referred to as voltage- controlled devices.
4. Amplifying action in BJT results in the label transistor;
transfer + capacitor → transistor
5. The lower the stability factor, the more sensitive the network to variations in that
parameter.
6. The input impedance of a BJT transistor amplifier is purely inductive in nature.
7. For BJT emitter-follower configuration, A, is low (1), while a 180° phase shift between
V. and Vi.
Transcribed Image Text:Q.1. Write True or False, then correct the following sentences 1. In the cutoff region the collector-base and base-emitter junctions of a transistor are both forward-biased. 2. The value of a of a transistor is (1/1+(1/ẞ)). 3. BJT transistor amplifiers are referred to as voltage- controlled devices. 4. Amplifying action in BJT results in the label transistor; transfer + capacitor → transistor 5. The lower the stability factor, the more sensitive the network to variations in that parameter. 6. The input impedance of a BJT transistor amplifier is purely inductive in nature. 7. For BJT emitter-follower configuration, A, is low (1), while a 180° phase shift between V. and Vi.
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