Q.1. determine whether each statement is true or false. 1. VBE decreases about 7.5 mV per degree Celsius (°C) increase in temperature. 2. The relationship between IC, IE and IB is IC = IE + IB. 3. Given ID = 14mA and VGs = 1V, if IDss = 9.5mA for a depletion-type MOS- FET, then Vp is (-2V). 4. The transistor is said to be in the active region when both the junctions are forward biased. 5. A, of Common base configuration is low (1). 6. BJT transistor amplifiers are referred to as voltage controlled devices. 7. Given an adc of (0.998), then Ic is 2 mA if IE = 4 mA. 8. The basic amplifying action was produced by transferring a voltage from a low- to a high-resistance circuit.

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Q.1. determine whether each statement is true or false.
1. VBE decreases about 7.5 mV per degree Celsius (°C) increase in temperature.
2. The relationship between IC, IE and IB is IC = IE + IB.
3. Given ID = 14mA and VGs = 1V, if IDss = 9.5mA for a depletion-type MOS-
FET, then Vp is (-2V).
4. The transistor is said to be in the active region when both the junctions are
forward biased.
5. A, of Common base configuration is low (1).
6. BJT transistor amplifiers are referred to as voltage controlled devices.
7. Given an adc of (0.998), then Ic is 2 mA if IE = 4 mA.
8. The basic amplifying action was produced by transferring a voltage from a low-
to a high-resistance circuit.
Transcribed Image Text:Q.1. determine whether each statement is true or false. 1. VBE decreases about 7.5 mV per degree Celsius (°C) increase in temperature. 2. The relationship between IC, IE and IB is IC = IE + IB. 3. Given ID = 14mA and VGs = 1V, if IDss = 9.5mA for a depletion-type MOS- FET, then Vp is (-2V). 4. The transistor is said to be in the active region when both the junctions are forward biased. 5. A, of Common base configuration is low (1). 6. BJT transistor amplifiers are referred to as voltage controlled devices. 7. Given an adc of (0.998), then Ic is 2 mA if IE = 4 mA. 8. The basic amplifying action was produced by transferring a voltage from a low- to a high-resistance circuit.
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