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Q. For the self-bias network of Fig.2, where; p = (-3) V, Inss ra 40 k. VDD = 20 V, RG Determine the following: Vaso, Ino, Rs. gm, and Rp. = 10 M2, 4, = 12 mA and, (-10), and Veso is one-third of Vp. C₁ -VID Rp C₂ не RG RS 20 א Figure 2 Q.. Design a voltage-divider bias network using a depletion-type MOSFET with Inss = 10 mA and Vp = (-4 V) to have a Q-point at Ing = 2.5 mA using a supply of 24 V. In addition, set VG = 4V and use Rp=2.5Rs with R, = 22 MQ. Use standard values.

Q. For the self-bias network of Fig.2, where; p = (-3) V, Inss ra 40 k. VDD = 20 V, RG Determine the following: Vaso, Ino, Rs. gm, and Rp. = 10 M2, 4, = 12 mA and, (-10), and Veso is one-third of Vp. C₁ -VID Rp C₂ не RG RS 20 א Figure 2 Q.. Design a voltage-divider bias network using a depletion-type MOSFET with Inss = 10 mA and Vp = (-4 V) to have a Q-point at Ing = 2.5 mA using a supply of 24 V. In addition, set VG = 4V and use Rp=2.5Rs with R, = 22 MQ. Use standard values.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Q. For the self-bias network of Fig.2, where; p = (-3) V, Inss ra 40 k. VDD = 20 V, RG Determine the following: Vaso, Ino, Rs. gm, and Rp. = 10 M2, 4, = 12 mA and, (-10), and Veso is one-third of Vp. C₁ -VID Rp C₂ не RG RS 20 א Figure 2 Q.. Design a voltage-divider bias network using a depletion-type MOSFET with Inss = 10 mA and Vp = (-4 V) to have a Q-point at Ing = 2.5 mA using a supply of 24 V. In addition, set VG = 4V and use Rp=2.5Rs with R, = 22 MQ. Use standard values.
Transcribed Image Text:Q. For the self-bias network of Fig.2, where; p = (-3) V, Inss ra 40 k. VDD = 20 V, RG Determine the following: Vaso, Ino, Rs. gm, and Rp. = 10 M2, 4, = 12 mA and, (-10), and Veso is one-third of Vp. C₁ -VID Rp C₂ не RG RS 20 א Figure 2 Q.. Design a voltage-divider bias network using a depletion-type MOSFET with Inss = 10 mA and Vp = (-4 V) to have a Q-point at Ing = 2.5 mA using a supply of 24 V. In addition, set VG = 4V and use Rp=2.5Rs with R, = 22 MQ. Use standard values.
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