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Problem 3)- a) Determine the maximum value of the energy gap (bandgap) which a semiconductor, used as a photodetector, can have if it is to be sensitive to yellow light (600 nm). b) A photodetector whose area is 5×10-2 cm² is irradiated with yellow light whose intensity is 2mW cm2. Assuming that each photon generates one electron-hole pair (EHP), calculate the number of EHPS generated per second. c) From the known energy gap of the semiconductor GaAs (Eg = 1.42 eV), calculate the primary wavelength of photons emitted from this crystal as a result of electron-hole recombination. Is this wavelength in the visible? d) Will a silicon photodetector be sensitive to the radiation from a GaAs laser? Why?

Problem 3)- a) Determine the maximum value of the energy gap (bandgap) which a semiconductor, used as a photodetector, can have if it is to be sensitive to yellow light (600 nm). b) A photodetector whose area is 5×10-2 cm² is irradiated with yellow light whose intensity is 2mW cm2. Assuming that each photon generates one electron-hole pair (EHP), calculate the number of EHPS generated per second. c) From the known energy gap of the semiconductor GaAs (Eg = 1.42 eV), calculate the primary wavelength of photons emitted from this crystal as a result of electron-hole recombination. Is this wavelength in the visible? d) Will a silicon photodetector be sensitive to the radiation from a GaAs laser? Why?

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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3a and 3b) please help with solving parts a and b only.
Problem 3)- a) Determine the maximum value of the energy gap (bandgap) which a semiconductor, used as a photodetector, can have if it is to be sensitive to yellow light (600 nm). b) A photodetector whose area is 5×10-2 cm² is irradiated with yellow light whose intensity is 2m W cm2. Assuming that each photon generates one electron-hole pair (EHP), calculate the number of EHPS generated per second. c) From the known energy gap of the semiconductor GaAs (Eg = 1.42 eV), calculate the primary wavelength of photons emitted from this crystal as a result of electron-hole recombination. Is this wavelength in the visible? d) Will a silicon photodetector be sensitive to the radiation from a GaAs laser? Why?
Transcribed Image Text:Problem 3)- a) Determine the maximum value of the energy gap (bandgap) which a semiconductor, used as a photodetector, can have if it is to be sensitive to yellow light (600 nm). b) A photodetector whose area is 5×10-2 cm² is irradiated with yellow light whose intensity is 2m W cm2. Assuming that each photon generates one electron-hole pair (EHP), calculate the number of EHPS generated per second. c) From the known energy gap of the semiconductor GaAs (Eg = 1.42 eV), calculate the primary wavelength of photons emitted from this crystal as a result of electron-hole recombination. Is this wavelength in the visible? d) Will a silicon photodetector be sensitive to the radiation from a GaAs laser? Why?
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