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Problem 1: BJT Darlington Pair Two silicon BJT are arranged as a Darlington pair. Both transistors have VBE.ON = 0.7 V, VCE.SAT = 0.2 V, and VA → 00. Hint: To analyze the circuit, assume first that both transistors are in the forward active region, compute the currents and voltages, then check if they meet the conditions necessary for the FA region. VBB 5 V 5 V RB Rc1 RC2 Q1 o VOUT BJT Darlington Pair Given are the following: • VBB = 5 V • B = 150 • B2 = 40 • RB = 120 kN • Rci = 500 N • Rc2 = 100N Analyze the circuit and answer the following: 1. Compute for VCE1- Round to 2 decimal places. V 2. Identify the value of VOUT- ROund to 1 decimal place. V 3. Calculate Ic2. Round to the nearest milliampere. 4. What should be the value of RB if VOUT must be approximately 1.80 V? Round to the nearest kiloohms. ko

Problem 1: BJT Darlington Pair Two silicon BJT are arranged as a Darlington pair. Both transistors have VBE.ON = 0.7 V, VCE.SAT = 0.2 V, and VA → 00. Hint: To analyze the circuit, assume first that both transistors are in the forward active region, compute the currents and voltages, then check if they meet the conditions necessary for the FA region. VBB 5 V 5 V RB Rc1 RC2 Q1 o VOUT BJT Darlington Pair Given are the following: • VBB = 5 V • B = 150 • B2 = 40 • RB = 120 kN • Rci = 500 N • Rc2 = 100N Analyze the circuit and answer the following: 1. Compute for VCE1- Round to 2 decimal places. V 2. Identify the value of VOUT- ROund to 1 decimal place. V 3. Calculate Ic2. Round to the nearest milliampere. 4. What should be the value of RB if VOUT must be approximately 1.80 V? Round to the nearest kiloohms. ko

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Problem 1: BJT Darlington Pair Two silicon BJT are arranged as a Darlington pair. Both transistors have VBE.ON = 0.7 V, VCE.SAT = 0.2 V, and VA → 0. Hint: To analyze the circuit, assume first that both transistors are in the forward active region, compute the currents and voltages, then check if they meet the conditions necessary for the FA region. VBB 5 V 5 V RB Rc1 RC2 Q1 VOUT Q2 BJT Darlington Pair Given are the following: • VBB = 5 V • B = 150 • B2 = 40 Rв — 120 kl • Rci = 500 N • Rc2 = 100 N Analyze the circuit and answer the following: 1. Compute for VCE1. Round to 2 decimal places. V 2. Identify the value of VOUT. Round to 1 decimal place. V 3. Calculate Ic2. Round to the nearest milliampere. 4. What should be the value of RB if VOUT must be approximately 1.80 V? Round to the nearest kiloohms.
Transcribed Image Text:Problem 1: BJT Darlington Pair Two silicon BJT are arranged as a Darlington pair. Both transistors have VBE.ON = 0.7 V, VCE.SAT = 0.2 V, and VA → 0. Hint: To analyze the circuit, assume first that both transistors are in the forward active region, compute the currents and voltages, then check if they meet the conditions necessary for the FA region. VBB 5 V 5 V RB Rc1 RC2 Q1 VOUT Q2 BJT Darlington Pair Given are the following: • VBB = 5 V • B = 150 • B2 = 40 Rв — 120 kl • Rci = 500 N • Rc2 = 100 N Analyze the circuit and answer the following: 1. Compute for VCE1. Round to 2 decimal places. V 2. Identify the value of VOUT. Round to 1 decimal place. V 3. Calculate Ic2. Round to the nearest milliampere. 4. What should be the value of RB if VOUT must be approximately 1.80 V? Round to the nearest kiloohms.
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