power transistor encapsulated in an aluminum case that is attached at its base yk = 240 W/m-K, thickness L = 8 mm, and width W = 24 mm. The case isj ssure of 1 bar, and the back surface of the plate transfers heat by natural conve gs at T = Tsur = 30°C. The surface has an emissivity of ε = 0.9, and the con pletely enclosed such that heat transfer may be assumed to occur exclusively t
power transistor encapsulated in an aluminum case that is attached at its base yk = 240 W/m-K, thickness L = 8 mm, and width W = 24 mm. The case isj ssure of 1 bar, and the back surface of the plate transfers heat by natural conve gs at T = Tsur = 30°C. The surface has an emissivity of ε = 0.9, and the con pletely enclosed such that heat transfer may be assumed to occur exclusively t
Elements Of Electromagnetics
7th Edition
ISBN:9780190698614
Author:Sadiku, Matthew N. O.
Publisher:Sadiku, Matthew N. O.
ChapterMA: Math Assessment
Section: Chapter Questions
Problem 1.1MA
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Complete this problem pls

Transcribed Image Text:ttempt in pr
Consider a power transistor encapsulated in an aluminum case that is attached at its base to a square aluminum plate of thermal
conductivity k = 240 W/m-K, thickness L = 8 mm, and width W = 24 mm. The case is joined to the plate by screws that maintain a
contact pressure of 1 bar, and the back surface of the plate transfers heat by natural convection and radiation to ambient air and large
surroundings at T = Tsur = 30°C. The surface has an emissivity of = 0.9, and the convection coefficient is h = 48 W/m².K. The
case is completely enclosed such that heat transfer may be assumed to occur exclusively through the base plate.
Ts.p =
Your answer is partially correct.
9max
357.9
i
Transistor
case
Ts,c, Pelec
0.5992
Enclosure -
If the air-filled aluminum-to-aluminum interface is characterized by an area of Ac = 2 × 10-4 m² and a roughness of 10 μm and the
surface temperature of the case, Tsc, is not to exceed 85°C, determine the maximum allowable power dissipation, in W, and the
associated surface temperature of the power transistor, Tsp, in K.
K
0
W
L
- Base plate, (k,e)
-Interface, Ac
-Ts.p
111
Tsur
Air
To h
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