Plasma etching is essential to the fine-line pattern transfer in current semiconductor processes. An article gives the accompanying data (read from a graph) on chlorine flow (x, in SCCM) through a nozzle used in the etching mechanism and etch rate (y, in 100 A/min). x 1.5 1.6 2.0 2.5 2.5 3.0 3.5 3.5 3.9 y 24.5 24.5 25.5 29.5 33.5 39.0 40.5 44.5 50.0 (a) Create a 99% two-sided confidence interval for the true average change in etch rate associated with a 1-SCCM increase in flow rate. (Round your answers to 3 decimal places, if needed.) (, )
Plasma etching is essential to the fine-line pattern transfer in current semiconductor processes. An article gives the accompanying data (read from a graph) on chlorine flow (x, in SCCM) through a nozzle used in the etching mechanism and etch rate (y, in 100 A/min).
| x | 1.5 | 1.6 | 2.0 | 2.5 | 2.5 | 3.0 | 3.5 | 3.5 | 3.9 |
| y | 24.5 | 24.5 | 25.5 | 29.5 | 33.5 | 39.0 | 40.5 | 44.5 | 50.0 |
(a) Create a 99% two-sided confidence interval for the true average change in etch rate associated with a 1-SCCM increase in flow rate. (Round your answers to 3 decimal places, if needed.)
(, )
(b) Create a 99% two-sided confidence interval for the true average etch rate when flow is 3.5. (Round your answers to 3 decimal places, if needed.)
Predicted value = Standard error =
(, )
(c) Create a 99% two-sided prediction interval for an etch rate when flow is 3.5. (Round your answers to 3 decimal places, if needed.)
Predicted value = Standard error =
(, )
(d) Would the 95% CI and PI when flow is 2.5 be wider or narrower than the corresponding intervals of parts (b) and (c)? Answer without actually computing the intervals.
(e) Would you recommend calculating a 95% PI for a flow of 6.5? Explain.
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