Photodiodes and solar cells are both specially designed PN junction diodes packaged to permit light to reach the vicinity of the junction. Consider a P+N step junction diode where incident light is uniformly absorbed throughout the N region of the device producing photogeneration rate of GL electron-hole pairs/cm³s. Assume that low-level injection prevails so that the minority drift current is negligible. (a) What is the excess minority carrier concentration on the N side at a large distance (x) from the junction? [Note: p'(x-∞) 0. Far away from the junction, the recombination rate is equal to the photocarrier generation rate]. (b) The usual quasi-equilibrium boundary conditions still hold at the edges of the depletion layer. Using those and the boundary condition established in part (a), device an expression for the IV characteristic of the P+N diode under the stated conditions of illumination. Ignore all recombination/generation, including photogeneration, occurring in the depletion layer. (c) Sketch the general form of the IV characteristics for GL = 0 and GL = GLO- Indicate the voltage developed across the diode when the diode is an open circuit, i.e., I = 0. What is the current that will flow when the diode is short circuited, i.e., V = 0?
Photodiodes and solar cells are both specially designed PN junction diodes packaged to permit light to reach the vicinity of the junction. Consider a P+N step junction diode where incident light is uniformly absorbed throughout the N region of the device producing photogeneration rate of GL electron-hole pairs/cm³s. Assume that low-level injection prevails so that the minority drift current is negligible. (a) What is the excess minority carrier concentration on the N side at a large distance (x) from the junction? [Note: p'(x-∞) 0. Far away from the junction, the recombination rate is equal to the photocarrier generation rate]. (b) The usual quasi-equilibrium boundary conditions still hold at the edges of the depletion layer. Using those and the boundary condition established in part (a), device an expression for the IV characteristic of the P+N diode under the stated conditions of illumination. Ignore all recombination/generation, including photogeneration, occurring in the depletion layer. (c) Sketch the general form of the IV characteristics for GL = 0 and GL = GLO- Indicate the voltage developed across the diode when the diode is an open circuit, i.e., I = 0. What is the current that will flow when the diode is short circuited, i.e., V = 0?
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![Photodiodes and solar cells are both specially designed PN junction diodes packaged to
permit light to reach the vicinity of the junction. Consider a P+N step junction diode
where incident light is uniformly absorbed throughout the N region of the device
producing photogeneration rate of GL electron-hole pairs/cm³s. Assume that low-level
injection prevails so that the minority drift current is negligible.
(a) What is the excess minority carrier concentration on the N side at a large distance
(x) from the junction? [Note: p'(x-∞) 0. Far away from the junction, the
recombination rate is equal to the photocarrier generation rate].
(b) The usual quasi-equilibrium boundary conditions still hold at the edges of the
depletion layer. Using those and the boundary condition established in part
(a), device an expression for the IV characteristic of the P+N diode under the
stated conditions of illumination. Ignore all recombination/generation, including
photogeneration, occurring in the depletion layer.
(c) Sketch the general form of the IV characteristics for GL = 0 and GL = GLO-
Indicate the voltage developed across the diode when the diode is an open
circuit, i.e., I = 0. What is the current that will flow when the diode is short
circuited, i.e., V = 0?](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Fd53b5d21-36fa-4ee2-932f-fd40dc0982c5%2F60bbac4d-4657-4337-a675-bdede6795d6a%2Ffx8nm9l_processed.jpeg&w=3840&q=75)
Transcribed Image Text:Photodiodes and solar cells are both specially designed PN junction diodes packaged to
permit light to reach the vicinity of the junction. Consider a P+N step junction diode
where incident light is uniformly absorbed throughout the N region of the device
producing photogeneration rate of GL electron-hole pairs/cm³s. Assume that low-level
injection prevails so that the minority drift current is negligible.
(a) What is the excess minority carrier concentration on the N side at a large distance
(x) from the junction? [Note: p'(x-∞) 0. Far away from the junction, the
recombination rate is equal to the photocarrier generation rate].
(b) The usual quasi-equilibrium boundary conditions still hold at the edges of the
depletion layer. Using those and the boundary condition established in part
(a), device an expression for the IV characteristic of the P+N diode under the
stated conditions of illumination. Ignore all recombination/generation, including
photogeneration, occurring in the depletion layer.
(c) Sketch the general form of the IV characteristics for GL = 0 and GL = GLO-
Indicate the voltage developed across the diode when the diode is an open
circuit, i.e., I = 0. What is the current that will flow when the diode is short
circuited, i.e., V = 0?
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