Photodiodes and sola r cells are both specially designed PN junction diodes packaged to permit light to reach the vicinity of the junction. Consider a P+N step junction diode where incident light is uniformly absorbed throughout the N region of the device producing photo generation rate of GL electron-hole pairslcm3s. Assume tha tlowleve l injection prevails so that the minority drift current is negligible.

Q: Draw the VI chan a silicon diode.

A:

Q: Match the devices and circuits with its equivalent characteristic, function and applications. Fy…

A: By pass capacitor -- connect parallel to RE Tunnel diode -- has negative resistance region used…

Q: Figure B3 shows a cross section for a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in…

A: According to the question, for the given MOSFET as shown below(a) We need to draw energy band…

Q: 1- We start considering the forbidden gap when the lattice spacing is nm. 2- What is the transient…

A: As per our company guidelines we are supposed to answer only first 3 sub-parts. Kindly repost other…

Q: nvestigate and analyze the processes of forward bias as well as reverse bias considering a pn…

A: Case a (Reverse Bias) When a diode is reverse biased with voltage Vb then we add that voltage to…

Q: Consider an ideal, silicon PN junction diode with uniform cross section and constant  

A: (a)The built in voltage can be calculated as, Substituting the given values in the above equation,…

Q: In a p+-n junction diode, if the minority carrier recombination rate is increased by 100 times, how…

A: A p-n junction is a two-terminal device in which the p-terminal is kept at a higher potential than…

Q: . Name the area in a PN junction which develops as a result when fusing PN materials together or…

A: PN junction  In PN junction diode a semiconductor which is intrinsic is doped with both p-type and…

Q: Q8. What is the difference between Zener breakdown and Avalanche breakdown?

A: Zener breakdown: Zener breakdown occurs in diode when a reverse voltage is applied to a zener diode.…

Q: The Fermi level of the P-Type semiconductor is located at O a. none of the other answers O b. The…

A:

Q: 7 A silicon n'p junction is biased at VR=10 V. Determine the percent change in Depletion region if…

A:

Q: A chunky tinsten silicon diode has a buffer voltage of 0.67V, and its rated current density is 6X…

A:

Q: Draw the cross section for a pn diode similar to that as shown if the fabrication process utilizes a…

A: The given cross-section of a p-n diode utilizes an n-type substrate.

Q: Forward bias current equation given  For n=1 and Is= 10pA. Plot the I vs VD Forward bias…

A: Forward bias current equation given i  If the =1 and Is= 10pA.   Plot the I vs VD Forward bias…

Q: . A pn junction is made from p-type silicon doped (1017 cm-3), and n-type silicon (1015 cm-).…

A:

Q: Q6. Can we operate normal PN junction diode in breakdown region for longer duration? Give reason

A: Here they are interested in the the PN junction characteristics.   Generally normal PN junctions are…

Q: Name the area in a PN junction which develops as a result when fusing PN materials together or…

A: Here basics of formation of p-n semiconductor material is discussed.

Q: Given n=1 and Is= 10npA. Plot the I vs VD Forward bias characteristics of a PN Diode at room…

A: Given data is  n=1, Is=10pA and current through PN diode is  I=IseVDnVT-1 Where I=current through…

Q: For the block diagram shown in figure Q3.Consider diodes with Vy-0.7V. Consider the Vin=240 Vrms…

A:

Q: A varactor is a pn junction diode that always operates in reverse-bias and is doped to maximize the…

A: The detailed answer is solved below according to the given parameters and instructions in the…

Q: Identify from the list the correct answer for the following questions This terminal of a diode must…

A: Note: When BE and CB junction is reverse biased= Cut off Region When BE forward and CB junction is…

Q: Write an expression for the total photo current iPH for a diode having dc plus signal current…

A: The expression for the total photo current is given as, iPH=IPH+iph

Q: Calculate the theoretical barrier height, built-in potential barrier and Schottky barrier width in a…

A: SOLUTION Given-->               Si/Cr Junction Diode…

Q: The intrinsic carrier density at 300 K is 1.5x 10¹0 /cm³, in silicon. For n-type silicon doped to…

A: Given data  Nd = 2.25 × 1015 cm-3 ni = 1.5 × 1010 cm-3 Na = 0 cm-3

Q: Verify the amplitude and frequency of the output waveform on the load resistor, RL. Peak voltage:…

A: Verify the amplitude and frequency of the output waveform on the load resistor Peak voltage waveform…

Q: For a silicon diode, calculate the diode current at room temperature (22degreescentigrade) if the…

A:

Q: Explain hyperabrupt PN junctions. How are they related with Varactor diodes.

A: Given:Hyperabrupt PN junctions.Required:We need to explain hyper-abrupt PN junctions and how they…

Q: 3. at ??? = 10mA. Determine also the diode dynamic resistance at ??? = 10mA, and compare it with the…

A: According to the question we have to determine the dynamic resistance.

Q: 2 Tovo =R₂ For the circuit above, draw a rough sketch of what the output voltage would look like.…

A: Given: A half wave rectifier with capacitor attached in output,  with input as sinusoidal signal…

Q: A one sided, planar, uniformly doped silicon pn junction diode is required to have a reversed biased…

A: Given: -Breakdown voltage Vb=60 VFind: -The maximum doping concentration NB in the low doped region.

Q: 4. Determine the thermal voltage for a diode at a temperati ze o 20°C. and fend the cerrent in…

A: In this question we will find thermal voltage of diode at given temperature and also find field…

Q: 3- Consider a silicon pn junction at T=300K with a p-type doping concentration of NA=1018 cm.…

A: Given pn junction at T=300K NA=1018 cm-3=1026 m-3Emax=3×105 V/cm          =3×107 V/mReverse bias…

Q: a. Illustrate any differences or similarities between BJT and FET. b. Draw the V-I characteristic of…

A: QN(a) The differences between BJT (Bipolar Junction Transistor) and FET (Field Effect Transistor)…

Q: For a silicon diode, calculate the diode current at room temperature (22degreescentigrade) if the…

A:

Q: A gallium arsenide pn junction has a diode current of Ip = 12 mA when biased at Vp = 1.10 V.…

A: we need to find out  reverse saturation current diode current when VD = 1 V.

Q: Calculate the effective state densities Uc and Uv for the semiconductors InAs and InSb and their…

A: For InAs: Basic Parameter Eg=0.354ev (1): Effective state density in Uc Nc=22πme*kTh232 (2):…

Photoconductive Cell

Photoconductive cells are light-sensitive resistors in which resistance is inversely proportionated to light intensity when illuminated. These devices consist of a thin single-crystal or polycrystalline film of composite semiconductor materials. Cadmium sulfide (CdS) is used to make the most commercially available photoconductive particles which are sensitive to light in the visible spectrum. Other less commonly used substances respond to infrared light, but not to the visible spectrum. Such substances are lead sulfide (PbS), lead selenide (PbSe), and lead telluride (PbTe), and so on.