Photodiodes and sola r cells are both specially designed PN junction diodes packaged to permit light to reach the vicinity of the junction. Consider a P+N step junction diode where incident light is uniformly absorbed throughout the N region of the device producing photo generation rate of GL electron-hole pairslcm3s. Assume tha tlowleve l injection prevails so that the minority drift current is negligible.

Q: 7 A silicon n'p junction is biased at VR=10 V. Determine the percent change in Depletion region if…

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Q: Draw the cross section for a pn diode similar to that as shown if the fabrication process utilizes a…

A: The given cross-section of a p-n diode utilizes an n-type substrate.

Q: . A pn junction is made from p-type silicon doped (1017 cm-3), and n-type silicon (1015 cm-).…

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Q: Draw and label separate energy-band diagrams representing n-type silicon, p-type silicon at room…

A: Silicon is a semiconductor material whose number of free electrons is less than a conductor but more…

Q: Identify from the list the correct answer for the following questions This terminal of a diode must…

A: Note: When BE and CB junction is reverse biased= Cut off Region When BE forward and CB junction is…

Q: Write an expression for the total photo current iPH for a diode having dc plus signal current…

A: The expression for the total photo current is given as, iPH=IPH+iph

Q: The intrinsic carrier density at 300 K is 1.5x 10¹0 /cm³, in silicon. For n-type silicon doped to…

A: Given data  Nd = 2.25 × 1015 cm-3 ni = 1.5 × 1010 cm-3 Na = 0 cm-3

Q: A one sided, planar, uniformly doped silicon pn junction diode is required to have a reversed biased…

A: Given: -Breakdown voltage Vb=60 VFind: -The maximum doping concentration NB in the low doped region.

Q: For a silicon diode, calculate the diode current at room temperature (22degreescentigrade) if the…

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Q: Calculate the intrinsic carrier concentration of a semiconductor in units of (cm-3). Use the room…

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Photoconductive Cell

Photoconductive cells are light-sensitive resistors in which resistance is inversely proportionated to light intensity when illuminated. These devices consist of a thin single-crystal or polycrystalline film of composite semiconductor materials. Cadmium sulfide (CdS) is used to make the most commercially available photoconductive particles which are sensitive to light in the visible spectrum. Other less commonly used substances respond to infrared light, but not to the visible spectrum. Such substances are lead sulfide (PbS), lead selenide (PbSe), and lead telluride (PbTe), and so on.